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1. (WO2018060518) SEMICONDUCTOR DEVICE AND METHOD FOR FORMING A SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/060518    International Application No.:    PCT/EP2017/074962
Publication Date: 05.04.2018 International Filing Date: 02.10.2017
IPC:
B81B 7/00 (2006.01)
Applicants: AMS INTERNATIONAL AG [CH/CH]; Rietstrasse 4 8640 Rapperswil (CH)
Inventors: BESLING, Willem Frederik Adrianus; (NL).
VAN DER AVOORT, Casper; (NL).
TAK, Coenraad Cornelis; (NL).
PIJNENBURG, Remco Henricus Wilhelmus; (NL).
WUNNICKE, Olaf; (NL).
GOOSSENS, Martijn; (NL)
Agent: EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Association No. 175 Schloßschmidstr. 5 80639 München (DE)
Priority Data:
16191885.9 30.09.2016 EP
Title (EN) SEMICONDUCTOR DEVICE AND METHOD FOR FORMING A SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET PROCÉDÉ DE FORMATION D'UN DISPOSITIF À SEMI-CONDUCTEUR
Abstract: front page image
(EN)A semiconductor device (10) comprises a substrate body (11), an environmental sensor (12), a cap body (13) and a volume of gas (14). The environmental sensor (12) and the volume of gas (14) are arranged between the substrate body (11) and the cap body (13) in a vertical direction (z) which is perpendicular to the main plane of extension of the substrate body (11), and at least one channel (15) between the substrate body (11) and the cap body (13) connects the volume of gas (14) with the environment of the semiconductor device (10) such that the channel (15) is permeable for gases.
(FR)La présente invention concerne un dispositif à semi-conducteur (10) comprenant un corps de substrat (11), un capteur environnemental (12), un corps de capuchon (13) et un volume de gaz (14). Le capteur environnemental (12) et le volume de gaz (14) sont disposés entre le corps de substrat (11) et le corps de capuchon (13) dans une direction verticale (z) qui est perpendiculaire au plan principal d'extension du corps de substrat (11), et au moins un canal (15) entre le corps de substrat (11) et le corps de capuchon (13) raccorde le volume de gaz (14) avec l'environnement du dispositif à semi-conducteur (10) de telle sorte que le canal (15) est perméable aux gaz.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)