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1. (WO2018059109) SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS COMPRISING SAME

Pub. No.:    WO/2018/059109    International Application No.:    PCT/CN2017/095178
Publication Date: Fri Apr 06 01:59:59 CEST 2018 International Filing Date: Tue Aug 01 01:59:59 CEST 2017
IPC: H01L 27/088
H01L 21/8234
H01L 29/78
Applicants: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
中国科学院微电子研究所
Inventors: ZHU, Huilong
朱慧珑
WANG, Guilei
王桂磊
RADAMSON, Henry, H
亨利·H·阿达姆松
ZHANG, Yanbo
张严波
ZHU, Zhengyong
朱正勇
Title: SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS COMPRISING SAME
Abstract:
A semiconductor device, manufacturing method thereof, and electronic apparatus comprising same. The semiconductor device comprises: a substrate (1001); a first source/drain layer (1005), a trench layer (1009), and a second source/drain layer (1013) sequentially stacked on the substrate (1001), wherein the trench layer (1009) comprises a semiconductor material enabling an increase of an on-state current and/or a decrease of an off-state current compared with the Si material; and a gate stack formed around a periphery of the trench layer (1009).