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1. (WO2018058898) DEGASSING METHOD, DEGASSING CHAMBER AND SEMICONDUCTOR PROCESSING EQUIPMENT

Pub. No.:    WO/2018/058898    International Application No.:    PCT/CN2017/075973
Publication Date: Fri Apr 06 01:59:59 CEST 2018 International Filing Date: Thu Mar 09 00:59:59 CET 2017
IPC: C23C 14/56
H01L 21/67
Applicants: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
北京北方华创微电子装备有限公司
Inventors: YE, Hua
叶华
JIA, Qiang
贾强
XU, Yue
徐悦
JIANG, Bingxuan
蒋秉轩
HOU, Jue
侯珏
SHI, Pu
石璞
ZHENG, Jinguo
郑金果
ZONG, Lingbei
宗令蓓
ZHAO, Mengxin
赵梦欣
DING, Peijun
丁培军
WANG, Hougong
王厚工
Title: DEGASSING METHOD, DEGASSING CHAMBER AND SEMICONDUCTOR PROCESSING EQUIPMENT
Abstract:
Provided are a degassing method, a degassing chamber and semiconductor processing equipment. The degassing method comprises: step S1: heating the degassing chamber, so that the internal temperature therein reaches a preset temperature and is kept constant at this preset temperature; and step S2: introducing a substrate to be degassed into the degassing chamber, and taking the substrate out of same after heating for a preset period of time. The degassing method provided by the present invention can not only improve the temperature uniformity of the same batch of substrates and different batches of substrates, but can also achieve the free moving-in and moving-out of the substrate to be degassed, thereby increasing the production capacity of the equipment.