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1. (WO2018058147) MAIN-AUXILIARY FIELD-EFFECT TRANSISTOR CONFIGURATIONS FOR RADIO FREQUENCY APPLICATIONS

Pub. No.:    WO/2018/058147    International Application No.:    PCT/US2017/053560
Publication Date: Fri Mar 30 01:59:59 CEST 2018 International Filing Date: Wed Sep 27 01:59:59 CEST 2017
IPC: H03K 17/687
H03K 17/693
H04B 1/44
Applicants: SKYWORKS SOLUTIONS, INC.
Inventors: WANG, Hailing
BARTLE, Dylan Charles
FUH, Hanching
MASON, Jerod F.
WHITEFIELD, David Scott
DICARLO, Paul T.
Title: MAIN-AUXILIARY FIELD-EFFECT TRANSISTOR CONFIGURATIONS FOR RADIO FREQUENCY APPLICATIONS
Abstract:
Disclosed herein are switching or other active FET configurations that implement a main-auxiliary branch design. Such designs include at least two FETs, an auxiliary FET providing an auxiliary path and a main FET providing a main path. Distortions that are generated in the main path, such as third-order harmonics and/or intermodulation distortions, can be reduced by distortions generated in the auxiliary path. This can be accomplished by applying a tailored gate bias to the auxiliary path so that the auxiliary path generates signals with distortions of a similar magnitude but opposite in phase relative to the distortions of the signals in the main path. Accordingly, the overall performance in the active FET is improved by reducing these distortions or nonlinearities.