Search International and National Patent Collections

1. (WO2018057228) METHOD AND APPARATUS FOR PROGRAMMING NON-VOLATILE MEMORY USING A MULTI-CELL STORAGE CELL GROUP TO PROVIDE ERROR LOCATION INFORMATION FOR RETENTION ERRORS

Pub. No.:    WO/2018/057228    International Application No.:    PCT/US2017/048514
Publication Date: Fri Mar 30 01:59:59 CEST 2018 International Filing Date: Fri Aug 25 01:59:59 CEST 2017
IPC: G11C 16/34
G11C 16/10
G11C 29/52
Applicants: INTEL CORPORATION
Inventors: WU, Wei
KHAN, Jawad B.
TRIKA, Sanjeev N.
ZOU, Yi
Title: METHOD AND APPARATUS FOR PROGRAMMING NON-VOLATILE MEMORY USING A MULTI-CELL STORAGE CELL GROUP TO PROVIDE ERROR LOCATION INFORMATION FOR RETENTION ERRORS
Abstract:
Provided are a method and apparatus for programming non-volatile memory using a multi-cell storage cell group to provide error location information for retention errors. Each storage cell in the non-volatile memory is programmed with threshold voltage levels and each storage cell is programmed from bits from a plurality of pages. A memory controller organizes the storage cells into storage cell groups, each storing m bits of information programmed with the threshold voltage levels. A determination is made of one threshold voltage level to use for each of the storage cells in the storage cell group to program a selected k bits in the storage cell group with threshold voltage levels defining one of a plurality of valid states. The threshold voltage levels for at least one of the storage cells of the storage cell group in any two valid states differ by at least two threshold voltage levels.