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1. (WO2018057141) NOVEL SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW 20NM
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/057141    International Application No.:    PCT/US2017/045966
Publication Date: 29.03.2018 International Filing Date: 08.08.2017
Chapter 2 Demand Filed:    22.03.2018    
IPC:
H01L 29/66 (2006.01), H01L 21/308 (2006.01), H01L 21/84 (2006.01)
Applicants: QUALCOMM INCORPORATED [US/US]; ATTN: International IP Administration 5775 Morehouse Drive San Diego, CA 92121-1714 (US)
Inventors: SONG, Stanley; (US).
XU, Jeffrey; (US).
YANG, Da; (US).
RIM, Kern; (US).
YEAP, Choh Fei; (US)
Agent: EDWARDS, Gary J.; (US).
ATTORNEYS AND AGENTS ASSOCIATED WITH CUSTOMER NO. 101306; HAYNES and BOONE, LLP 2323 Victory Avenue Suite 700 Dallas, Texas 75219 (US)
Priority Data:
15/271,043 20.09.2016 US
Title (EN) NOVEL SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW 20NM
(FR) NOUVEAU PROCÉDÉ DE FORMATION DE MOTIF QUADRUPLE AUTO-ALIGNÉ POUR UN PAS D'AILETTE INFÉRIEUR À 20 NM
Abstract: front page image
(EN)A method of producing a FinFET device with fin pitch of less than 20 nm is presented. In accordance with some embodiments, fins are deposited on sidewall spacers, which themselves are deposited on mandrels. The mandrels can be formed by lithographic processes while the fins and sidewall spacers formed by deposition technologies.
(FR)L'invention concerne un procédé de production d'un dispositif FinFET ayant un pas d'ailette inférieur à 20 nm. Selon certains modes de réalisation, des ailettes sont déposées sur des entretoises de paroi latérale, qui elles-mêmes sont déposées sur des mandrins. Les mandrins peuvent être formés par des procédés lithographiques tandis que les ailettes et les entretoises de paroi latérale sont formées par des technologies de dépôt.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)