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1. (WO2018057141) NOVEL SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW 20NM

Pub. No.:    WO/2018/057141    International Application No.:    PCT/US2017/045966
Publication Date: Fri Mar 30 01:59:59 CEST 2018 International Filing Date: Wed Aug 09 01:59:59 CEST 2017
IPC: H01L 29/66
H01L 21/308
H01L 21/84
Applicants: QUALCOMM INCORPORATED
Inventors: SONG, Stanley
XU, Jeffrey
YANG, Da
RIM, Kern
YEAP, Choh Fei
Title: NOVEL SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW 20NM
Abstract:
A method of producing a FinFET device with fin pitch of less than 20 nm is presented. In accordance with some embodiments, fins are deposited on sidewall spacers, which themselves are deposited on mandrels. The mandrels can be formed by lithographic processes while the fins and sidewall spacers formed by deposition technologies.