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1. (WO2018056578) QUANTUM DOT LIGHT-EMITTING ELEMENT COMPRISING SOLUTION PROCESS-TYPE CHARGE-GENERATING JUNCTION AND METHOD FOR MANUFACTURING SAME

Pub. No.:    WO/2018/056578    International Application No.:    PCT/KR2017/008892
Publication Date: Fri Mar 30 01:59:59 CEST 2018 International Filing Date: Thu Aug 17 01:59:59 CEST 2017
IPC: H01L 51/50
H01L 51/00
H01L 51/52
H01L 27/32
H01L 51/56
Applicants: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
경희대학교산학협력단
Inventors: JANG, Jin
장진
HWANG, Eun Sa
황은사
KIM, Hyo Min
김효민
Title: QUANTUM DOT LIGHT-EMITTING ELEMENT COMPRISING SOLUTION PROCESS-TYPE CHARGE-GENERATING JUNCTION AND METHOD FOR MANUFACTURING SAME
Abstract:
The present invention provides a structure of a quantum dot light-emitting element comprising a charge-generating junction layer and a method for manufacturing the same. A quantum dot light-emitting element comprising a charge-generating junction layer according to an embodiment of the present invention comprises: a negative electrode; a first charge-generating junction layer comprising a p-type semiconductor layer and an n-type semiconductor layer; a quantum dot light-emitting layer; a hole-transporting layer; a second charge-generating junction layer comprising a p-type semiconductor layer and an n-type semiconductor layer; and a positive layer. The first charge-generating junction layer and the second charge-generating junction layer are formed through a solution process such that generation and injection of charges are stabilized, the process time is shortened, and problems regarding the work function of the positive or negative electrode of the quantum dot light-emitting element can be improved.