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1. (WO2018056277) COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMING METHOD AND CIRCUIT PATTERN FORMING METHOD
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/056277 International Application No.: PCT/JP2017/033799
Publication Date: 29.03.2018 International Filing Date: 20.09.2017
IPC:
C07C 39/15 (2006.01) ,C07C 39/17 (2006.01) ,G03F 7/11 (2006.01) ,G03F 7/20 (2006.01) ,G03F 7/40 (2006.01) ,H01L 21/027 (2006.01)
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
C
ACYCLIC OR CARBOCYCLIC COMPOUNDS
39
Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
12
polycyclic with no unsaturation outside the aromatic rings
15
with all hydroxy groups on non-condensed rings
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
C
ACYCLIC OR CARBOCYCLIC COMPOUNDS
39
Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
12
polycyclic with no unsaturation outside the aromatic rings
17
containing other rings in addition to the six-membered aromatic rings
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
09
characterised by structural details, e.g. supports, auxiliary layers
11
having cover layers or intermediate layers, e.g. subbing layers
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26
Processing photosensitive materials; Apparatus therefor
40
Treatment after imagewise removal, e.g. baking
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
Applicants: MITSUBISHI GAS CHEMICAL COMPANY, INC.[JP/JP]; 5-2, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008324, JP
Inventors: ECHIGO, Masatoshi; JP
Agent: INABA, Yoshiyuki; JP
ONUKI, Toshifumi; JP
NAITO, Kazuhiko; JP
Priority Data:
2016-18302620.09.2016JP
Title (EN) COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMING METHOD AND CIRCUIT PATTERN FORMING METHOD
(FR) COMPOSÉ, RÉSINE, COMPOSITION, PROCÉDÉ DE FORMATION DE MOTIF PHOTOSENSIBLE ET PROCÉDÉ DE FORMATION DE MOTIF DE CIRCUIT
(JA) 化合物、樹脂、組成物、並びにレジストパターン形成方法及び回路パターン形成方法
Abstract:
(EN) A compound represented by expression (0) is provided. (In expression (0), RY is a hydrogen atom, an alkyl group of 1-30 carbons or an aryl group of 6-30 carbons, RZ is an N-valent group of 1-60 carbons or a simple bond, RT is a hydrogen atom, the RS's are independently an alkyl group of 1-30 carbons optionally having a substituent, an aryl group of 6-30 carbons optionally having a substituent, an alkenyl group of 2-30 carbons optionally having a substituent, an alkoxy group of 1-30 carbons optionally having a substituent, a halogen atom, a nitro group, an amino group, a carboxylic acid group, a thiol group or a hydroxy group, with the aforementioned alkyl group, aryl group, alkenyl group and alkoxy group optionally including an ether bond, a ketone bond or an ester bond, the m's are independently integers between 0 and 7, N is an integer between 1 and 4, and, if N is an integer greater than or equal to 2, then the N structural formulas inside the square brackets '[]' may be the same or different.)
(FR) L'invention concerne un composé représenté par l'expression (0). (Dans l'expression (0), R Y est un atome d'hydrogène, un groupe alkyle de 1 à 30 atomes de carbone ou un groupe aryle de 6 à 30 atomes de carbone, R Z est un groupe de valence N de 1 à 60 atomes de carbone ou une liaison simple, R T est un atome d'hydrogène, les R S sont indépendamment un groupe alkyle de 1 à 30 atomes de carbone ayant éventuellement un substituant, un groupe aryle de 6 à 30 atomes de carbone ayant éventuellement un substituant, un groupe alcényle de 2 à 30 atomes de carbone ayant éventuellement un substituant, un groupe alcoxy de 1 à 30 atomes de carbone ayant éventuellement un substituant, un atome d'halogène, un groupe nitro, un groupe amino, un groupe acide carboxylique, un groupe thiol ou un groupe hydroxy, avec le groupe alkyle susmentionné, le groupe aryle, le groupe alcényle et le groupe alcoxy comprenant éventuellement une liaison éther, une liaison cétone ou une liaison ester, les m sont indépendamment des nombres entiers entre 0 et 7, N est un nombre entier compris entre 1 et 4, et si N est un nombre entier supérieur ou égal à 2, alors les N formules structurales à l'intérieur des crochets '[]' peuvent être identiques ou différents.)
(JA) 本発明は、下記式(0)で表される、化合物を提供する。 (式(0)中、Rは、水素原子、炭素数1~30のアルキル基又は炭素数6~30のアリール基であり、 Rは、炭素数1~60のN価の基又は単結合であり、 Rは、水素原子であり、 Rは、各々独立して、置換基を有していてもよい炭素数1~30のアルキル基、置換基を有していてもよい炭素数6~30のアリール基、置換基を有していてもよい炭素数2~30のアルケニル基、置換基を有していてもよい炭素数1~30のアルコキシ基、ハロゲン原子、ニトロ基、アミノ基、カルボン酸基、チオール基又は水酸基であり、前記アルキル基、前記アリール基、前記アルケニル基及び前記アルコキシ基は、エーテル結合、ケトン結合又はエステル結合を含んでいてもよく、 mは、各々独立して0~7の整数であり、Nは、1~4の整数であり、ここで、Nが2以上の整数の場合、N個の[ ]内の構造式は同一であっても異なっていてもよい。)
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)