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1. (WO2018055900) SWITCHING ELEMENT DRIVING CIRCUIT
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Pub. No.: WO/2018/055900 International Application No.: PCT/JP2017/027059
Publication Date: 29.03.2018 International Filing Date: 26.07.2017
IPC:
H03K 17/695 (2006.01) ,H02M 1/08 (2006.01) ,H03K 17/16 (2006.01) ,H03K 17/56 (2006.01) ,H03K 17/687 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
51
characterised by the use of specified components
56
by the use, as active elements, of semiconductor devices
687
the devices being field-effect transistors
695
having inductive loads
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
M
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
1
Details of apparatus for conversion
08
Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
16
Modifications for eliminating interference voltages or currents
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
51
characterised by the use of specified components
56
by the use, as active elements, of semiconductor devices
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
51
characterised by the use of specified components
56
by the use, as active elements, of semiconductor devices
687
the devices being field-effect transistors
Applicants:
アイシン・エィ・ダブリュ株式会社 AISIN AW CO., LTD. [JP/JP]; 愛知県安城市藤井町高根10番地 10, Takane, Fujiicho, Anjo-shi, Aichi 4441192, JP
Inventors:
▲高▼倉裕司 TAKAKURA Yuji; JP
中村恭士 NAKAMURA Yasushi; JP
Agent:
特許業務法人R&C R&C IP LAW FIRM; 大阪府大阪市北区中之島三丁目3番3号 3-3, Nakanoshima 3-chome, Kita-ku, Osaka-shi, Osaka 5300005, JP
Priority Data:
2016-18583323.09.2016JP
Title (EN) SWITCHING ELEMENT DRIVING CIRCUIT
(FR) CIRCUIT DE COMMANDE D'ÉLÉMENT DE COMMUTATION
(JA) スイッチング素子駆動回路
Abstract:
(EN) The purpose of the present invention is to suitably control a switching element to an off state even in a case when a switching control signal is amplified, and the supply of power to a driving circuit transmitted to the switching element is delayed. Provided are: a compensation resistor (R2) that connects an input unit (IN) and an output unit (OUT) of a push-pull buffer circuit (21); and an input-side pull-down resistor (R3) that connects the input unit (IN) and a negative electrode (VG) side of a switching element (3) subject to driving. The sum of the resistance value of the compensation resistor (R2) and the resistance value of the input-side pull-down resistor (R3) is set to a value that is smaller than the resistance value of a resistor (R1) between a control terminal (G) of the switching element (3) subject to driving and an emitter terminal or a source terminal (S) of the switching element (3), and greater than the resistance value of a lower-side current controlling resistor (R21L) connected between a second potential (–V2) more negative than the negative electrode (VG) and a lower-side buffer element (21L).
(FR) La présente invention concerne la commande appropriée d'un élément de commutation vers un état non passant même dans un cas où un signal de commande de commutation est amplifié, et l'alimentation électrique d'un circuit de commande transmise à l'élément de commutation est retardée. Plus précisément le circuit selon l'invention comprend : une résistance de compensation (R2) qui connecte une unité d'entrée (IN) et une unité de sortie (OUT) d'un circuit tampon symétrique (21); et une résistance de rappel vers le niveau bas côté entrée (R3) qui connecte l'unité d'entrée (IN) et un côté électrode négative (VG) d'un élément de commutation (3) soumis à la commande. La somme de la valeur de résistance de la résistance de compensation (R2) et de la valeur de résistance de la résistance de rappel vers le niveau bas côté entrée (R3) est réglée à une valeur inférieure à la valeur de résistance d'une résistance (R1) entre une borne de commande (G) de l'élément de commutation (3) soumis à la commande et une borne d'émission ou une borne de source (S) de l'élément de commutation (3), et supérieure à la valeur de résistance d'une résistance de commande de courant côté inférieur (R21L) connectée entre un second potentiel (–V2) plus négatif que l'électrode négative (VG) et un élément tampon côté inférieur (21L).
(JA) スイッチング制御信号を増幅してスイッチング素子に伝達する駆動回路への電力供給が滞った場合においても、適切にスイッチング素子をオフ状態に制御する。プッシュプルバッファ回路(21)の入力部(IN)と出力部(OUT)とを接続する補償抵抗(R2)と、入力部(IN)と駆動対象のスイッチング素子(3)の負極(VG)の側とを接続する入力側プルダウン抵抗(R3)と、を備え、補償抵抗(R2)の抵抗値と入力側プルダウン抵抗(R3)の抵抗値との和が、駆動対象のスイッチング素子(3)の制御端子(G)とスイッチング素子(3)のエミッタ端子又はソース端子(S)との間の抵抗(R1)の抵抗値よりも小さく、負極(VG)よりも負の第2電位(-V2)と下段側バッファ素子(21L)との間に接続された下段側電流制限抵抗(R21L)の抵抗値よりも大きい値に設定されている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)