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1. (WO2018055719) SILICON CARBIDE SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/055719    International Application No.:    PCT/JP2016/077944
Publication Date: Fri Mar 30 01:59:59 CEST 2018 International Filing Date: Sat Sep 24 01:59:59 CEST 2016
IPC: H01L 29/78
H01L 27/04
H01L 29/12
Applicants: MITSUBISHI ELECTRIC CORPORATION
三菱電機株式会社
Inventors: ORITSUKI Yasunori
折附 泰典
TARUI Yoichiro
樽井 陽一郎
Title: SILICON CARBIDE SEMICONDUCTOR DEVICE
Abstract:
The present invention pertains to a silicon carbide semiconductor device provided with: a second-electroconductivity-type third impurity region located in an outer periphery region, which is the outer periphery of a cell disposition region in which a unit cell is disposed; a field insulation film that is thicker than a gate insulation film arranged in the outer periphery region; an interlayer insulation film arranged on the field insulation film, a gate electrode, and the gate insulation film; and gate wiring and a gate pad that are electrically connected to each other via a first main electrode arranged on the interlayer insulation film, and the gate electrode arranged on the field insulation film. The third impurity region has a second-electroconductivity-type fourth impurity region provided selectively on the upper layer section thereof, the fourth impurity region has a higher impurity concentration than the third impurity region, the gate wiring and the gate pad are provided in the outer periphery region, and the fourth impurity region is provided adjacent to the cell disposition region, provided so as to surround at least the region below the gate pad, and electrically connected to the first main electrode.