Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2018055346) CORRELATED ELECTRON SWITCH STRUCTURES AND THEIR MANUFACTURE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/055346 International Application No.: PCT/GB2017/052770
Publication Date: 29.03.2018 International Filing Date: 18.09.2017
IPC:
H01L 45/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Applicants:
ARM LTD [GB/GB]; 110 Fulbourn Road Cambridge CB1 9NJ, GB
Inventors:
SHIFREN, Lucian; GB
REID, Kimberly Gay; GB
YERIC, Gregory Munson; GB
Agent:
TLIP LTD; 14 King Street Leeds LS1 2HL, GB
Priority Data:
15/270,97420.09.2016US
Title (EN) CORRELATED ELECTRON SWITCH STRUCTURES AND THEIR MANUFACTURE
(FR) STRUCTURES DE COMMUTATEURS À ÉLECTRONS CORRÉLÉS ET LEUR FABRICATION
Abstract:
(EN) The presently disclosed techniques relate to devices and methods of their manufacture, comprising either a first metal layer Mn, a substrate formed thereon with a cavity exposing a portion of the metal layer, and a correlated electron material (1304, 1306) formed in the cavity; or a substrate (1308), a metal layer Mn formed thereon with a discontinuity, and a layer of correlated electron material (1304, 1306) as well as a metal via VIAn + 1 formed in the discontinuity.
(FR) Les techniques selon l'invention concernent des dispositifs et leurs procédés de fabrication, comprenant soit une première couche de métal Mn, un substrat formé sur cette dernière avec une cavité exposant une partie de la couche de métal, et un matériau à électrons corrélés (1304 1306) formé dans la cavité; soit un substrat (1308), une couche de métal Mn formée sur ce dernier avec une discontinuité, et une couche de matériau à électrons corrélés (1304, 1306) ainsi qu'un trou de métallisation VIAn + 1 formé dans la discontinuité.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)