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1. (WO2018052479) INTEGRATED SYSTEM FOR SEMICONDUCTOR PROCESS

Pub. No.:    WO/2018/052479    International Application No.:    PCT/US2017/015472
Publication Date: Fri Mar 23 00:59:59 CET 2018 International Filing Date: Sat Jan 28 00:59:59 CET 2017
IPC: H01L 21/67
H01L 21/3065
H01L 21/20
Applicants: APPLIED MATERIALS, INC.
Inventors: BAO, Xinyu
CHUNG, Hua
CHU, Schubert S.
Title: INTEGRATED SYSTEM FOR SEMICONDUCTOR PROCESS
Abstract:
Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to an integrated system for processing N-type metal-oxide semiconductor (NMOS) devices. In one implementation, a cluster tool for processing a substrate is provided. The cluster tool includes a pre-clean chamber, an etch chamber, one or more pass through chambers, one or more outgassing chambers, a first transfer chamber, a second transfer chamber, and one or more process chambers. The pre-clean chamber and the etch chamber are coupled to a first transfer chamber. The one or more pass through chambers are coupled to and disposed between the first transfer chamber and the second transfer chamber. The one or more outgassing chambers are coupled to the second transfer chamber. The one or more process chambers are coupled to the second transfer chamber.