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1. (WO2018052099) REVERSE CONDUCTING INSULATED-GATE BIPOLAR TRANSISTOR, AND PRODUCTION METHOD THEREFOR
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Pub. No.: WO/2018/052099 International Application No.: PCT/JP2017/033363
Publication Date: 22.03.2018 International Filing Date: 14.09.2017
IPC:
H01L 29/739 (2006.01) ,H01L 21/265 (2006.01) ,H01L 21/266 (2006.01) ,H01L 21/336 (2006.01) ,H01L 29/12 (2006.01) ,H01L 29/78 (2006.01) ,H01L 29/861 (2006.01) ,H01L 29/868 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
72
Transistor-type devices, i.e. able to continuously respond to applied control signals
739
controlled by field effect
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
265
producing ion implantation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
265
producing ion implantation
266
using masks
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
868
PIN diodes
Applicants:
富士電機株式会社 FUJI ELECTRIC CO., LTD. [JP/JP]; 神奈川県川崎市川崎区田辺新田1番1号 1-1, Tanabeshinden, Kawasaki-ku, Kawasaki-shi, Kanagawa 2109530, JP
Inventors:
内藤 達也 NAITO Tatsuya; JP
Agent:
龍華国際特許業務法人 RYUKA IP LAW FIRM; 東京都新宿区西新宿1-6-1 新宿エルタワー22階 22F, Shinjuku L Tower, 1-6-1, Nishi-Shinjuku, Shinjuku-ku, Tokyo 1631522, JP
Priority Data:
2016-18002414.09.2016JP
2017-13818114.07.2017JP
Title (EN) REVERSE CONDUCTING INSULATED-GATE BIPOLAR TRANSISTOR, AND PRODUCTION METHOD THEREFOR
(FR) TRANSISTOR BIPOLAIRE À PORTE ISOLÉE À CONDUCTION INVERSE ET SON PROCÉDÉ DE PRODUCTION
(JA) RC-IGBTおよびその製造方法
Abstract:
(EN) Provided is a reverse conducting insulated-gate bipolar transistor (RC-IGBT) provided with a transistor section and a diode section. The RC-IGBT provided with the transistor section and the diode section is provided with: a semiconductor substrate; a first conductivity type drift region provided to the upper surface side of the semiconductor substrate; a second conductivity type base region provided above the drift region; a first conductivity type source region provided above the base region; and two or more trench portions which are provided so as to pass through the source region and the base region from the upper end side of the source region. The diode section is provided with: the source region; a contact trench provided to the upper surface side of the semiconductor substrate, and between two adjacent trench portions among the two or more trench portions; and a second conductivity type contact layer which is provided below the contact trench, and which has a higher concentration than the base region.
(FR) L'invention concerne un transistor bipolaire à porte isolée à conduction inverse (RC-IGBT) comportant une section de transistor et une section de diode. Le RC-IGBT comportant la section de transistor et la section de diode comporte : un substrat semi-conducteur ; une région de dérive de premier type de conductivité disposée sur le côté de surface supérieure du substrat semi-conducteur ; une région de base de second type de conductivité disposée au-dessus de la région de dérive ; une région de source de premier type de conductivité disposée au-dessus de la région de base ; et au moins deux parties de tranchée disposées de façon à passer à travers la région de source et la région de base à partir du côté d'extrémité supérieure de la région de source. La section de diode comporte : la région de source ; une tranchée de contact disposée sur le côté de surface supérieure du substrat semi-conducteur et entre deux parties de tranchée adjacentes desdites deux parties de tranchée ; et une couche de contact de second type de conductivité disposée au-dessous de la tranchée de contact et dont la concentration est plus élevée que la région de base.
(JA) トランジスタ部とダイオード部とを有するRC-IGBTを提供する。トランジスタ部とダイオード部とを有するRC-IGBTであって、半導体基板と、半導体基板の上面側に設けられた第1導電型のドリフト領域と、ドリフト領域の上方に設けられた第2導電型のベース領域と、ベース領域の上方に設けられた第1導電型のソース領域と、ソース領域の上端側から、ソース領域およびベース領域を貫通して設けられた2以上のトレンチ部とを備え、ダイオード部は、ソース領域と、2以上のトレンチ部のうち隣接する2つのトレンチ部の間において、半導体基板の上面側に設けられたコンタクトトレンチと、コンタクトトレンチの下方に設けられ、ベース領域よりも高濃度である第2導電型のコンタクト層とを備えるRC-IGBTを提供する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)