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1. (WO2018051772) GROUP-III NITRIDE LAMINATE, AND SEMICONDUCTOR DEVICE HAVING LAMINATE
Latest bibliographic data on file with the International Bureau    Submit observation
Pub. No.: WO/2018/051772 International Application No.: PCT/JP2017/030706
Publication Date: 22.03.2018 International Filing Date: 28.08.2017
IPC:
C30B 29/38 (2006.01) ,C23C 16/34 (2006.01) ,C30B 25/02 (2006.01) ,H01L 21/205 (2006.01) ,H01L 33/32 (2010.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
38
Nitrides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
34
Nitrides
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
32
containing nitrogen
Applicants: STANLEY ELECTRIC CO., LTD.[JP/JP]; 2-9-13, Nakameguro, Meguro-ku, Tokyo 1538636, JP
Inventors: KINOSHITA, Toru; JP
OBATA, Toshiyuki; JP
Agent: LEXT, P.C.; Nishi-Shinjuku Mitsui Bldg. 18F, 24-1, Nishi-Shinjuku 6-Chome, Shinjuku-ku Tokyo 1600023, JP
Priority Data:
2016-17911414.09.2016JP
Title (EN) GROUP-III NITRIDE LAMINATE, AND SEMICONDUCTOR DEVICE HAVING LAMINATE
(FR) STRATIFIÉ DE NITRURE DU GROUPE III ET DISPOSITIF À SEMI-CONDUCTEUR COMPRENANT LE STRATIFIÉ
(JA) ＩＩＩ族窒化物積層体、及び該積層体を有する半導体デバイス
Abstract:
(EN) Provided is a group-III nitride laminate characterized by having, on an AlN monocrystal substrate, an n-type AlXGa1-XN layer (0.5≤X<1) lattice-matched to the AlN monocrystal substrate, wherein the n-type AlXGa1-XN layer has at least a laminate structure in which a first n-type AlX1Ga1-X1N layer, a second n-type AlX2Ga1-X2N layer, and a third n-type AlX3Ga1-X3N layer are stacked in this order from the AlN monocrystal substrate side, and X1, X2, and X3 indicating the Al composition in the respective layers satisfy 0<|X1-X2|≤0.1 and 0<|X2-X3|≤0.1.
(FR) Cette invention concerne un stratifié de nitrure de groupe III caractérisé en ce qu'il présente, sur un substrat monocristallin d'AlN, une couche d'AlXGa1-XN (où 0,5≤X<1) ayant la même maille cristalline que le substrat monocristallin d'AlN, la couche d'AlXGa1-XN ayant au moins une structure stratifiée dans laquelle une première couche d'AlX1Ga1-X1N, une deuxième couche d'AlX2Ga1-X2N, et une troisième couche d'AlX3Ga1-X3N sont empilées dans cet ordre à partir du côté du substrat monocristallin d'AlN, où X1, X2 et X3 qui indiquent la composition d'Al dans les couches respectives satisfont 0<|X1-X2|≤0,1 et 0<|X2-X3|≤0,1.
(JA) ＡｌＮ単結晶基板上に、該ＡｌＮ単結晶基板と格子整合したｎ型ＡｌXＧａ1-XＮ層（０．５≦Ｘ＜１）を有し、該ｎ型ＡｌXＧａ1-XＮ層が、第一のｎ型ＡｌX1Ｇａ1-X1Ｎ層と、第二のｎ型ＡｌX2Ｇａ1-X2Ｎ層と、第三のｎ型ＡｌX3Ｇａ1-X3Ｎ層とを、該ＡｌＮ単結晶基板側からこの順で積層した積層構造を少なくとも有し、　各層のＡｌ組成を示すＸ１、Ｘ２、およびＸ３が、０＜｜Ｘ１－Ｘ２｜≦０．１を満足し、かつ０＜｜Ｘ２－Ｘ３｜≦０．１を満足することを特徴とするＩＩＩ族窒化物積層体を提供する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)