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Classical Chinese
1. (WO2018050068) PRESSURE LOADING FILM
PCT Biblio. Data
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Pub. No.:
WO/2018/050068
International Application No.:
PCT/CN2017/101582
Publication Date:
22.03.2018
International Filing Date:
13.09.2017
IPC:
B24B 37/04
(2012.01),
B24B 37/30
(2012.01),
B24B 21/04
(2006.01),
H01L 21/302
(2006.01),
H01L 21/304
(2006.01)
B
PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37
Lapping machines or devices; Accessories
04
designed for working plane surfaces
B
PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37
Lapping machines or devices; Accessories
27
Work carriers
30
for single side lapping of plane surfaces
B
PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
21
Machines or devices using grinding or polishing belts; Accessories therefor
04
for grinding plane surfaces
H
ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or A
III
B
V
compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
H
ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or A
III
B
V
compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants:
TSINGHUA UNIVERSITY
[CN/CN]; Qinghuayuan, Haidian District Beijing 100084 (CN).
HWATSING TECHNOLOGY CO., LTD.
[CN/CN]; #8 Building, No. 9 Juxing Rd., Haihe Sci-tech Park, Jinnan District Tianjin 300350 (CN)
Inventors:
CHEN, Xiangyu
; (CN).
ZHAO, Dewen
; (CN).
WANG, Tongqing
; (CN).
LI, Kun
; (CN).
LU, Xinchun
; (CN)
Agent:
TSINGYIHUA INTELLECTUAL PROPERTY LLC
; Room 301 Trade Building, Zhaolanyuan, Tsinghua University, Qinghuayuan Haidian District Beijing 100084 (CN)
Priority Data:
201610822183.4
13.09.2016
CN
Title
(EN)
PRESSURE LOADING FILM
(FR)
FILM DE CHARGEMENT DE PRESSION
(ZH)
压力加载膜
Abstract:
(EN)
Disclosed is a pressure loading film (100). The pressure loading film (100) comprises: a film body (10), the film body (10) comprising a plurality of mutually isolated sub-cavities (30), the sub-cavities (30) being used for injecting a pressure medium so as to be adapted to load pressure onto a sample by means of a pressure loading surface (16) of the film body (10); and a supporting framework (20), the supporting framework (20) being arranged in the film body (10), and an elastic coefficient of the supporting framework (20) being greater than that of the film body (10). The pressure loading film (100) can realize independent pressure loading for each of the sub-cavities (30), so that the pressure in each area of the pressure loading surface (16) is loaded stably and pressure coupling is not easily caused.
(FR)
La présente invention concerne un film de chargement de pression (100). Le film de chargement de pression (100) comprend : un corps de film (10), le corps de film (10) comprenant une pluralité de sous-cavités mutuellement isolées (30), les sous-cavités (30) étant utilisées pour injecter un milieu de pression de manière à être adaptées à charger une pression sur un échantillon au moyen d'une surface de chargement de pression (16) du corps de film (10) ; et un cadre de support (20), le cadre de support (20) étant disposé dans le corps de film (10), et un coefficient élastique du cadre de support (20) étant supérieur à celui du corps de film (10). Le film de chargement de pression (100) peut réaliser un chargement de pression indépendant pour chacune des sous-cavités (30), de telle sorte que la pression dans chaque zone de la surface de chargement de pression (16) est chargée de manière stable et l'accouplement de pression n'est pas facilement provoqué.
(ZH)
一种压力加载膜(100),压力加载膜(100)包括:膜本体(10),膜本体(10)包括多个相互隔绝开的子腔室(30),子腔室(30)用于注入压力介质,以适于通过膜本体(10)的加压面(16)向样品加载压力;支撑骨架(20),支撑骨架(20)设在膜本体(10)内,且支撑骨架(20)的弹性系数大于膜本体(10)的弹性系数。压力加载膜(100)可以实现各个子腔室(30)的压力独立加载,使得加压面(16)的各个区域的压力加载稳定,不易产生压力耦合。
Designated States:
AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language:
Chinese (
ZH
)
Filing Language:
Chinese (
ZH
)