A dielectric-insulating magnetic electrode helical arc-resistant processing technique. In the technique, an electrode (3) is disposed on an electronic device body (1), and has a helical shape. When an electric current flows through the electrode, a generated axial magnetic field is perpendicular to a surface of the electrode of a chip. A Lorentz force generated by the axial magnetic field drives electrons in a body of the chip to move forward in a helical manner. Wire terminals are arranged at a central region. The electrical current ultimately flows to the central region, such that a surface current density significantly drops at the center to reduce the field strength between the wire terminals, thereby preventing an arc from being formed between two wire terminals at the central region. According to experiments, the helical MOV has an energy absorption capability 3-4 times of that of the prior art, and exhibits a hot melt- and breakdown-resistant capability of a MOV. The helical MOV has a persistent over-voltage-resistant temperature 1.7-2.0 times of the temperature of a linear L-type wire voltage-dependent varistor, reaching up to 150-174 ℃ and completely exceeding the average industry standard.