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1. (WO2018049350) CHEMICALLY-SENSITIVE FIELD-EFFECT TRANSISTOR WITH MICROWELL STRUCTURE AND METHOD FOR PRODUCING THE SAME
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/049350    International Application No.:    PCT/US2017/051010
Publication Date: 15.03.2018 International Filing Date: 11.09.2017
IPC:
G01N 27/414 (2006.01)
Applicants: LIFE TECHNOLOGIES CORPORATION [US/US]; IP Legal Department 5823 Newton Drive Carlsbad, CA 92008 (US)
Inventors: LI, James; (US).
OWENS, Jordan; (US).
BUSTILLO, James; (US)
Agent: SCHELL, John; (US)
Priority Data:
62/385,399 09.09.2016 US
Title (EN) CHEMICALLY-SENSITIVE FIELD-EFFECT TRANSISTOR WITH MICROWELL STRUCTURE AND METHOD FOR PRODUCING THE SAME
(FR) TRANSISTOR À EFFET DE CHAMP CHIMIQUEMENT SENSIBLE AVEC STRUCTURE DE MICROPUITS ET SON PROCÉDÉ DE PRODUCTION
Abstract: front page image
(EN)In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface, a first opening extending through a first material and through a portion of a second material located on the first material and a second opening extending from the bottom of the first opening to the top of a liner layer located on the upper surface of the floating gate conductor.
(FR)Dans un mode de réalisation, la présente invention concerne un capteur chimique. Le capteur chimique comprend un transistor à effet de champ chimiquement sensible comprenant un conducteur de grille flottante ayant une surface supérieure, une première ouverture s’étendant à travers un premier matériau et à travers une partie d’un deuxième matériau situé sur le premier matériau et une deuxième ouverture s’étendant du fond de la première ouverture au sommet d’une couche de revêtement située sur la surface supérieure du conducteur de grille flottante.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)