Search International and National Patent Collections

1. (WO2018049081) MATERIAL STRUCTURE AND METHOD FOR DEEP SILICON CARBIDE ETCHING

Pub. No.:    WO/2018/049081    International Application No.:    PCT/US2017/050563
Publication Date: Fri Mar 16 00:59:59 CET 2018 International Filing Date: Fri Sep 08 01:59:59 CEST 2017
IPC: H01L 21/3065
H01L 21/311
H01L 21/02
Applicants: THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY
Inventors: IMHOFF, Eugene, A.
KUB, Francis, J.
HOBART, Karl, D.
MYERS-WARD, Rachael, L.
Title: MATERIAL STRUCTURE AND METHOD FOR DEEP SILICON CARBIDE ETCHING
Abstract:
Material structures and methods for etching hexagonal, single-crystal silicon carbide (SiC) materials are provided, which include selection of on-axis or near on-axis hexagonal single-crystal SiC material as the material to be etched. The methods include etching of SiC bulk substrate material, etching of SiC material layers bonded to a silicon oxide layer, etching of suspended SiC material layers, and etching of a SiC material layer anodically bonded to a glass layer. Plasma-etched hexagonal single- crystal SiC materials of the invention may be used to form structures that include, but are not limited to, microelectromechanical beams, microelectromechanical membranes, microelectromechanical cantilevers, microelectromechanical bridges, and microelectromechanical field effect transistor devices. The material structures and methods of the invention beneficially provide improved etch symmetry, improved etch straightness, improved sidewall straightness, improved sidewall smoothness, and reduced sidewall wander compared to etched four degree off-axis SiC materials.