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1. (WO2018048889) IN SITU ION BEAM CURRENT MONITORING AND CONTROL IN SCANNED ION IMPLANTATION SYSTEMS

Pub. No.:    WO/2018/048889    International Application No.:    PCT/US2017/050261
Publication Date: Fri Mar 16 00:59:59 CET 2018 International Filing Date: Thu Sep 07 01:59:59 CEST 2017
IPC: H01J 37/317
Applicants: AXCELIS TECHNOLOGIES, INC.
Inventors: HALLING, Alfred
Title: IN SITU ION BEAM CURRENT MONITORING AND CONTROL IN SCANNED ION IMPLANTATION SYSTEMS
Abstract:
A system and method for controlling an ion implantation system as a function of sampling ion beam current and uniformity thereof. The ion implantation system includes optical elements configured to selectively steer and/or shape the ion beam as it is transported, wherein the ion beam is sampled at a high frequency to provide ion beam current samples, which are then analyzed to detect fluctuations, nonuniformities or unpredicted variations amongst ion beam current samples. These beam current samples are compared against predetermined threshold levels, and/or predicted nonuniformity levels to generate a control signal when a detected nonuniformity in the plurality of ion beam current density samples exceeds a predetermined threshold. A control system generates a control signal for interlocking the beam transport or for varying an input to at least one optical element to control variations in beam current.