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1. (WO2018048481) GROUP 4 TRANSITION METAL-CONTAINING FILM FORMING COMPOSITIONS FOR VAPOR DEPOSITION OF GROUP 4 TRANSITION METAL-CONTAINING FILMS
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/048481    International Application No.:    PCT/US2017/026817
Publication Date: 15.03.2018 International Filing Date: 10.04.2017
IPC:
C23C 16/455 (2006.01), C23C 16/18 (2006.01), C23C 16/50 (2006.01), C07F 7/28 (2006.01)
Applicants: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE [FR/FR]; 75 quai d'Orsay F-75007 Paris (FR) (AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BE, BF, BG, BH, BJ, BN, BR, BW, BY, BZ, CA, CF, CG, CH, CI, CL, CM, CN, CO, CR, CU, CY, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, FR, GA, GB, GD, GE, GH, GM, GN, GQ, GR, GT, GW, HN, HR, HU, ID, IE, IL, IN, IR, IS, IT, JP, KE, KG, KH, KM, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MC, MD, ME, MG, MK, ML, MN, MR, MT, MW, MX, MY, MZ, NA, NE, NG, NI, NL, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SI, SK, SL, SM, SN, ST, SV, SY, SZ, TD, TG, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, ZA, ZM, ZW only).
AIR LIQUIDE ELECTRONICS U.S. LP [US/US]; 9101 LBJ Freeway Dallas, Texas 75243 (US) (US only).
WANG, Ziyun [US/US]; (US) (US only).
WAN, Zhiwen [US/US]; (US) (US only).
GIRARD, Jean-Marc [FR/FR]; (FR) (US only)
Inventors: WANG, Ziyun; (US).
WAN, Zhiwen; (US).
GIRARD, Jean-Marc; (FR)
Agent: MCQUEENEY, Patricia E.; (US).
WHITE, Allen E.; (US).
CRONIN, Christopher J.; (US).
HAYNES, Elwood L.; (US).
MURRAY, Justin K.; (US)
Priority Data:
62/385,689 09.09.2016 US
Title (EN) GROUP 4 TRANSITION METAL-CONTAINING FILM FORMING COMPOSITIONS FOR VAPOR DEPOSITION OF GROUP 4 TRANSITION METAL-CONTAINING FILMS
(FR) COMPOSITIONS FILMOGÈNES CONTENANT UN MÉTAL DE TRANSITION DU GROUPE 4 POUR LE DÉPÔT EN PHASE VAPEUR DE FILMS CONTENANT UN MÉTAL DE TRANSITION DU GROUPE 4
Abstract: front page image
(EN)Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal azatrane precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.
(FR)L'invention concerne des compositions filmogènes contenant un métal de transition du groupe 4 comprenant des précurseurs d'azatrane de métal de transition du groupe 4. L'invention porte également sur des procédés de synthèse et d'utilisation des précurseurs de l'invention pour déposer des films contenant un métal de transition du groupe 4 sur un ou plusieurs substrats par des procédés de dépôt en phase vapeur.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)