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1. (WO2018047844) METHOD FOR PRODUCING GALLIUM NITRIDE LAMINATE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/047844 International Application No.: PCT/JP2017/032040
Publication Date: 15.03.2018 International Filing Date: 06.09.2017
Chapter 2 Demand Filed: 05.06.2018
IPC:
C30B 29/38 (2006.01) ,C30B 19/04 (2006.01) ,H01L 21/208 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
38
Nitrides
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
19
Liquid-phase epitaxial-layer growth
02
using molten solvents, e.g. flux
04
the solvent being a component of the crystal composition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
208
using liquid deposition
Applicants:
デクセリアルズ株式会社 DEXERIALS CORPORATION [JP/JP]; 東京都品川区大崎一丁目11番2号 ゲートシティ大崎イーストタワー8階 Gate City Osaki East Tower 8F., 1-11-2, Osaki, Shinagawa-ku, Tokyo 1410032, JP
Inventors:
渡邊 誠 WATANABE, Makoto; JP
秋山 晋也 AKIYAMA, Shinya; JP
Agent:
亀谷 美明 KAMEYA, Yoshiaki; JP
金本 哲男 KANEMOTO, Tetsuo; JP
萩原 康司 HAGIWARA, Yasushi; JP
松本 一騎 MATSUMOTO, Kazunori; JP
Priority Data:
2016-17766512.09.2016JP
Title (EN) METHOD FOR PRODUCING GALLIUM NITRIDE LAMINATE
(FR) PROCÉDÉ DE PRODUCTION D'UN STRATIFIÉ DE NITRURE DE GALLIUM
(JA) 窒化ガリウム積層体の製造方法
Abstract:
(EN) [Problem] To provide a novel improved method for producing a gallium nitride laminate, the method being capable of preparing a single-crystal layer with less crystal defects. [Solution] In order to solve the problem, according to an aspect of the present invention, provided is a method for producing a gallium nitride laminate, the method comprising: an intermediate layer-forming step for forming, on a substrate (11), an intermediate layer (12) of gallium nitride having a random crystal orientation; and a single-crystal layer-forming step for forming a single-crystal layer (13) of gallium nitride on the intermediate layer (12) by a liquid-phase epitaxial growth method. The intermediate layer (12) may also be formed by the liquid-phase epitaxial growth method.
(FR) La présente invention concerne un nouveau procédé amélioré de production d'un stratifié de nitrure de gallium, le procédé étant capable de préparer une couche monocristalline avec un nombre réduit de défauts cristallins. Selon un aspect, l'invention concerne un procédé de production d'un stratifié de nitrure de gallium, le procédé comprenant : une étape de formation de couche intermédiaire pour former, sur un substrat (11), une couche intermédiaire (12) de nitrure de gallium ayant une orientation cristalline aléatoire ; et une étape de formation de couche monocristalline pour former une couche monocristalline (13) de nitrure de gallium sur la couche intermédiaire (12) par un procédé de croissance épitaxiale en phase liquide. La couche intermédiaire (12) peut également être formée par le procédé de croissance épitaxiale en phase liquide.
(JA) 【課題】結晶欠陥の少ない単結晶層を作製することが可能な、新規かつ改良された窒化ガリウム積層体の製造方法を提供する。【解決手段】上記課題を解決するために、本発明のある観点によれば、基板(11)上に結晶方位がランダムな窒化ガリウムの中間層(12)を形成する中間層形成工程と、中間層(12)上に液相エピタキシャル成長法により窒化ガリウムの単結晶層(13)を形成する単結晶層形成工程と、を含む、窒化ガリウム積層体の製造方法が提供される。中間層(12)も液相エピタキシャル成長法によって形成されても良い。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)