Mobile |
Deutsch |
Español |
Français |
日本語 |
한국어 |
Português |
Русский |
中文 |
العربية |
PATENTSCOPE
Search International and National Patent Collections
Options
Query
Result
Interface
Office
Translate
«
↓
»
Query Language
All
English
Hebrew
Korean
Spanish
Vietnamese
Arabic
Estonian
Indonesian
Polish
Swedish
Chinese
French
Italian
Portuguese
Swedish
Danish
German
Japanese
Russian
Thai
Stem
Sort by:
Relevance
Pub Date Desc
Pub Date Asc
App Date Desc
App Date Asc
List Length
10
50
100
200
Result List Language
Query Language
Vietnamese
German
Italian
Arabic
Swedish
English
Hebrew
Japanese
Polish
Estonian
Spanish
Portuguese
Russian
Danish
Indonesian
Korean
French
Chinese
Swedish
Thai
Displayed Fields
Application Number
Abstract
Int. Class
Inventor Name
Publication Date
Applicant Name
Image
Chart/Graph
Table
Graph
Group by
None
IPC code
Inventors
Publication Dates
Offices of NPEs
Applicants
Filing Dates
Countries
No of Items/Group
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
Download Fields
NPEs
Default Search Form
Simple
Advanced Search
Field Combination
Browse by Week (PCT)
Cross Lingual Expansion
Translator
Default Tab Search Form
Front Page
Any Field
Full Text
ID/Numbers
IPC
Names
Dates
Interface Language
English
Deutsch
Français
Español
日本語
中文
한국어
Português
Русский
Skins
Default
Plain
Blue_Sky
Classic
Deep_Marine
Emerald_Town
Japan_Cherry
Ruby
Wine
Multiple Windows Interface
Tooltip Help
IPC Tooltip Help
Office:
All
All
PCT
Africa
ARIPO
Egypt
Kenya
Morocco
Tunisia
South Africa
Americas
United States of America
Canada
LATIPAT
Argentina
Brazil
Chile
Colombia
Costa Rica
Cuba
Dominican Rep.
Ecuador
El Salvador
Guatemala
Honduras
Mexico
Nicaragua
Panama
Peru
Uruguay
Asia-Europe
Australia
Bahrain
China
Denmark
Estonia
Eurasian Patent Office
European Patent Office
France
Germany
Germany(DDR data)
Israel
Japan
Jordan
Portugal
Russian Federation
Russian Federation(USSR data)
Saudi Arabia
United Arab Emirates
Spain
Republic of Korea
India
United Kingdom
Georgia
Asean
Singapore
Viet Nam
Indonesia
Cambodia
Malaysia
Brunei Darussalam
Philippines
Thailand
WIPO translate (Wipo internal translation tool)
Search
Simple
Advanced Search
Field Combination
Cross Lingual Expansion
Browse
Browse by Week (PCT)
Gazette Archive
Download National Phase Entries
Sequence listing
IPC Green Inventory
Portal to patent registers
Translate
WIPO Translate
WIPO Pearl
Options
Sort
Graph
Show Options
News
PATENTSCOPE News
Login
Login
Account Sign Up
Help
How to Search
User Guide PATENTSCOPE
User Guide: Cross Lingual Expansion
User Guide: ChemSearch
Query Syntax
Fields Definition
Country Code
Data Coverage
PCT applications
PCT national phase entry
National collections
Global Dossier public
FAQ
Feedback&Contact
INID codes
Kind codes
Tutorials
About
Overview
Terms And Conditions
Disclaimer
Home
IP Services
PATENTSCOPE
Machine translation
Wipo Translate
Arabic
German
English
Spanish
French
Japanese
Korean
Portuguese
Russian
Chinese
Google Translate
Bing/Microsoft Translate
Baidu Translate
Arabic
English
French
German
Spanish
Portuguese
Russian
Korean
Japanese
Chinese
...
Italian
Thai
Cantonese
Classical Chinese
1. (WO2018047220) LASER DEVICE AND LASER ANNEAL DEVICE
PCT Biblio. Data
Full Text
National Phase
Notices
Drawings
Documents
«
↓
»
Latest bibliographic data on file with the International Bureau
⇨
Submit observation
PermaLink
PermaLink
Bookmark
Pub. No.:
WO/2018/047220
International Application No.:
PCT/JP2016/076103
Publication Date:
15.03.2018
International Filing Date:
06.09.2016
IPC:
H01L 21/268
(2006.01)
H
ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or A
III
B
V
compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
268
using electromagnetic radiation, e.g. laser radiation
Applicants:
GIGAPHOTON INC.
[JP/JP]; 400, Oaza Yokokurashinden, Oyama-shi, Tochigi 3238558 (JP)
Inventors:
TANAKA, Satoshi
; (JP).
WAKABAYASHI, Osamu
; (JP)
Agent:
MATSUURA, Kenzo
; Matsuura & Associates, P.O. Box 176, Shinjuku Sumitomo Bldg. 23F, 6-1, Nishi-shinjuku 2-chome, Shinjuku-ku, Tokyo 1630223 (JP)
Priority Data:
Title
(EN)
LASER DEVICE AND LASER ANNEAL DEVICE
(FR)
DISPOSITIF LASER ET DISPOSITIF DE RECUIT LASER
(JA)
レーザ装置およびレーザアニール装置
Abstract:
(EN)
A laser device for laser annealing is provided with: A) a laser oscillator that outputs pulsed laser light; and B) an OPS device which is disposed on the optical path of the pulsed laser light output from the laser oscillator, and which includes at least one OPS for stretching the pulse time width of the incident pulsed laser light, wherein, among the OPSs, a first OPS of which a delay optical path length L that is the length of a delay optical path becomes the smallest has a delay optical path length L(1) which is in the range of the following expression (A). ΔT75% × c ≤ L(1) ≤ ΔT25% × c Expression (A) where ΔT
a%
is the time full-width of the position at which the optical intensity exhibits the value of a% with respect to a peak value in the input waveform of pulsed laser light that is output from the laser oscillator and that becomes incident on the OPS device, and c is the speed of light.
(FR)
Un dispositif laser pour recuit laser est pourvu : A) d'un oscillateur laser qui émet une lumière laser pulsée; et B) d'un dispositif OPS qui est disposé sur le trajet optique de la lumière laser pulsée émise par l'oscillateur laser, et qui comprend au moins un OPS pour étirer la largeur de temps d'impulsion de la lumière laser pulsée incidente, un premier OPS, parmi les OPS, dont la longueur de trajet optique de retard L qui est la longueur d'un trajet optique de retard devient la plus petite, présente une longueur de trajet optique de retard L(1) qui est dans la plage de l'expression (A) suivante. ΔT75% × c ≤ L(1) ≤ ΔT25% × c Expression (A) où ΔT
a%
est la pleine largeur de temps de la position à laquelle l'intensité optique présente la valeur de a% par rapport à une valeur de pic dans la forme d'onde d'entrée de la lumière laser pulsée qui est émise par l'oscillateur laser et qui devient incidente sur le dispositif OPS, et c est la vitesse de la lumière.
(JA)
レーザアニール用のレーザ装置は、以下を備える:A.パルスレーザ光を出力するレーザ発振器;及び、B.レーザ発振器から出力されたパルスレーザ光の光路上に配置され、入射したパルスレーザ光のパルス時間幅をストレッチする少なくとも1つのOPSを含むOPS装置であって、OPSのうち、遅延光路の長さである遅延光路長Lが最小となる第1のOPSの遅延光路長L(1)が、以下の式(A)の範囲にあるOPS装置。 ΔT75%×c≦L(1)≦ΔT25%×c・・・・・式(A) ここで、ΔT
a%
は、前記レーザ発振器から出力され、前記OPS装置に入射するパルスレーザ光の入力波形において、光強度がピーク値に対してa%の値を示す位置の時間全幅であり、cは光速である。
Designated States:
AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language:
Japanese (
JA
)
Filing Language:
Japanese (
JA
)