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Pub. No.:    WO/2018/047082    International Application No.:    PCT/IB2017/055376
Publication Date: 15.03.2018 International Filing Date: 06.09.2017
H01L 31/0352 (2006.01), H01L 31/0224 (2006.01), H01L 31/0304 (2006.01), H01L 31/08 (2006.01), C25B 1/06 (2006.01), C01B 3/04 (2006.01), H01G 9/20 (2006.01)
Applicants: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY [SA/SA]; 4700 King Abdullah University of Science and Technology Thuwal, 23955-6900 (SA)
Inventors: OOI, Boon S.; (SA).
HUSSEIN, Mohamed Ebaid Abdrabou; (SA).
NG, Tien Khee; (SA).
MIN, Jungwook; (SA)
Priority Data:
62/384,947 08.09.2016 US
Abstract: front page image
(EN)Embodiments describe a photoelectrode including a first III-nitride nanowire layer, a transparent substrate in contact with the first nanowire layer at a first substrate surface and a second III-nitride nanowire layer in contact with the substrate at a second substrate surface, substantially opposite the first substrate surface.
(FR)Des modes de réalisation de l'invention concernent une photoélectrode comprenant une première couche de nanofil de nitrure III, un substrat transparent en contact avec la première couche de nanofil au niveau d'une première surface de substrat et une deuxième couche de nanofil de nitrure III en contact avec le substrat au niveau d'une deuxième surface de substrat, sensiblement opposée à la première surface de substrat.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)