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1. (WO2018046854) METHOD FOR SORTING SILICON WAFERS ACCORDING TO THE NET DOPING VARIATION
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Pub. No.: WO/2018/046854 International Application No.: PCT/FR2017/052374
Publication Date: 15.03.2018 International Filing Date: 07.09.2017
IPC:
H01L 31/18 (2006.01) ,C30B 29/06 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
06
Silicon
Applicants:
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES; 25 Rue Leblanc Bâtiment le Ponant D 75015 Paris, FR
Inventors:
LETTY, Elénore; FR
FAVRE, Wilfried; FR
VEIRMAN, Jordi; FR
Agent:
LEBKIRI, Alexandre; FR
Priority Data:
165836508.09.2016FR
Title (EN) METHOD FOR SORTING SILICON WAFERS ACCORDING TO THE NET DOPING VARIATION
(FR) PROCÉDÉ DE TRI DE PLAQUETTES EN SILICIUM EN FONCTION DE LA VARIATION DU DOPAGE NET
Abstract:
(EN) The invention relates to a Czochralski-type method for sorting wafers obtained by cutting a single-crystal silicon ingot, the method being implemented when the wafers are in an as-cut state or in a shaped-surface state, and comprising the following steps: a) measuring (S1) a first value (Iz1) of a parameter representative of the majority free charge carrier concentration (n0/p0) in a first area (Z1) located at the centre of each wafer, and a second value (Iz2) of said parameter in a second area (Z2) located in the immediate vicinity of an edge of each wafer; b) calculating (S2) a relative variation (R) of said parameter between the edge and the centre of each wafer, on the basis of the first and second values (Iz1, Iz2) of the parameter; c) comparing (S3) the relative variation of said parameter in each wafer with a threshold value (Rlim); and d) discarding (S4) the wafer when the relative variation (R) of said parameter exceeds the threshold value (Rlim).
(FR) L'invention concerne un procédé de tri de plaquettes obtenues par découpage d'un lingot en silicium monocristallin de type Czochralski, mis en œuvre lorsque les plaquettes sont dans un état brut de découpe ou dans un état de mise en forme de leur surface, et comprenant les étapes suivantes : a) mesurer (S1 ) une première valeur (Iz1 ) d'un paramètre représentatif de la concentration en porteurs de charge libres majoritaires (no/po) dans une première zone (Z1 ) située au centre de chaque plaquette et une deuxième valeur (Iz2) dudit paramètre dans une deuxième zone (Z2) située au voisinage immédiat d'un bord de chaque plaquette; b) calculer (S2) une variation relative (R) dudit paramètre entre le bord et le centre de chaque plaquette, à partir des première et deuxième valeurs (Izi, Iz2) dudit paramètre; c) comparer (S3) la variation relative dudit paramètre dans chaque plaquette à une valeur seuil (Rlim); et d) écarter (S4) la plaquette lorsque la variation relative (R) dudit paramètre est supérieure à la valeur seuil (Rlim).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: French (FR)
Filing Language: French (FR)