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1. (WO2018045251) NUCLEATION LAYER FOR GROWTH OF III-NITRIDE STRUCTURES

Pub. No.:    WO/2018/045251    International Application No.:    PCT/US2017/049783
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Fri Sep 01 01:59:59 CEST 2017
IPC: H01L 21/20
Applicants: IQE, PLC
LABOUTIN, Oleg
KAO, Chen-kai
LO, Chien-fong
JOHNSON, Wayne
MARCHAND, Hugues
Inventors: LABOUTIN, Oleg
KAO, Chen-kai
LO, Chien-fong
JOHNSON, Wayne
MARCHAND, Hugues
Title: NUCLEATION LAYER FOR GROWTH OF III-NITRIDE STRUCTURES
Abstract:
Nucleation layers for growth of Ill-nitride structures, and methods for growing the nucleation layers, are described herein. A semiconductor can include a silicon substrate and a nucleation layer over the silicon substrate. The nucleation layer can include silicon and deep-level dopants. The semiconductor can include a Ill-nitride layer formed over the nucleation layer. At least one of the silicon substrate and the nucleation layer can include ionized contaminants. In addition, a concentration of the deep-level dopants is at least as high as a concentration of the ionized contaminants.