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1. (WO2018045175) NORMALLY-OFF GALLIUM OXIDE BASED VERTICAL TRANSISTORS WITH P-TYPE ALGAN BLOCKING LAYERS

Pub. No.:    WO/2018/045175    International Application No.:    PCT/US2017/049625
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Fri Sep 01 01:59:59 CEST 2017
IPC: H01L 29/772
H01L 29/423
H01L 29/66
Applicants: HRL LABORATORIES, LLC
Inventors: CAO, Yu
LI, Zijian
Title: NORMALLY-OFF GALLIUM OXIDE BASED VERTICAL TRANSISTORS WITH P-TYPE ALGAN BLOCKING LAYERS
Abstract:
A field-effect transistor includes an n-type gallium oxide substrate having a first doping concentration; an n-type gallium oxide drift layer on a first side of the substrate and having a second doping concentration smaller than the first doping concentration, a p-type Ill-nitride first base layer on the drift layer, and an n-type Ill- nitride source layer on the first base layer and having a third doping concentration larger than the second doping concentration. A method of forming the field-effect transistor includes providing an n-type gallium oxide drift layer having a first doping concentration on a first side of an n-type gallium oxide substrate having a second doping concentration larger than the first doping concentration, forming a p-type Ill- nitride first base layer on the drift layer, and forming an n-type Ill-nitride source layer on the first base layer and having a third doping concentration larger than the first doping concentration.