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1. (WO2018044904) SPECTRAL REFLECTOMETRY FOR IN-SITU PROCESS MONITORING AND CONTROL
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Pub. No.: WO/2018/044904 International Application No.: PCT/US2017/049138
Publication Date: 08.03.2018 International Filing Date: 29.08.2017
IPC:
G01N 21/95 (2006.01) ,G01N 21/55 (2006.01) ,G01N 21/25 (2006.01) ,G01N 21/88 (2006.01) ,G01N 21/956 (2006.01)
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21
Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible, or ultra-violet light
84
Systems specially adapted for particular applications
88
Investigating the presence of flaws, defects or contamination
95
characterised by the material or shape of the object to be examined
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21
Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible, or ultra-violet light
17
Systems in which incident light is modified in accordance with the properties of the material investigated
55
Specular reflectivity
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21
Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible, or ultra-violet light
17
Systems in which incident light is modified in accordance with the properties of the material investigated
25
Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21
Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible, or ultra-violet light
84
Systems specially adapted for particular applications
88
Investigating the presence of flaws, defects or contamination
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21
Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible, or ultra-violet light
84
Systems specially adapted for particular applications
88
Investigating the presence of flaws, defects or contamination
95
characterised by the material or shape of the object to be examined
956
Inspecting patterns on the surface of objects
Applicants:
KLA-TENCOR CORPORATION [US/US]; Legal Dept. One Technology Drive Milpitas, California 95035, US
Inventors:
JAIN, Prateek; US
WACK, Daniel; US
PETERLINZ, Kevin; US
SHCHEGROV, Andrei; US
KRISHNAN, Shankar; US
Agent:
MCANDREWS, Kevin; US
MORRIS, Elizabeth M.N.; US
Priority Data:
15/688,75128.08.2017US
62/380,74829.08.2016US
Title (EN) SPECTRAL REFLECTOMETRY FOR IN-SITU PROCESS MONITORING AND CONTROL
(FR) RÉFLECTOMÉTRIE SPECTRALE POUR SURVEILLANCE ET RÉGULATION IN SITU DE PROCESSUS
Abstract:
(EN) Methods and systems for performing in-situ, selective spectral reflectometry (SSR) measurements of semiconductor structures disposed on a wafer are presented herein. Illumination light reflected from a wafer surface is spatially imaged. Signals from selected regions of the image are collected and spectrally analyzed, while other portions of the image are discarded. In some embodiments, a SSR includes a dynamic mirror array (DMA) disposed in the optical path at or near a field plane conjugate to the surface of the semiconductor wafer under measurement. The DMA selectively blocks the undesired portion of wafer image. In other embodiments, a SSR includes a hyperspectral imaging system including a plurality of spectrometers each configured to collect light from a spatially distinct area of a field image conjugate to the wafer surface. Selected spectral signals associated with desired regions of the wafer image are selected for analysis.
(FR) L'invention concerne des procédés et des systèmes pour la réalisation in situ de mesures de réflectométrie spectrale sélective (SSR) concernant des structures semi-conductrices disposées sur une tranche. Une lumière d'éclairage réfléchie par la surface d'une tranche est imagée spatialement. Des signaux provenant de régions sélectionnées de l'image sont recueillis et analysés spectralement, tandis que d'autres parties de l'image sont rejetées. Dans certains modes de réalisation, une SSR fait intervenir un réseau de miroirs dynamiques (DMA) disposé sur le trajet optique au niveau ou à proximité d'un plan de champ conjugué à la surface de la tranche à semi-conducteurs faisant l'objet des mesures. Le DMA bloque sélectivement la partie non souhaitée de l'image de la tranche. Dans d'autres modes de réalisation, une SSR fait intervenir un système d'imagerie hyperspectrale comprenant une pluralité de spectromètres configurés chacun pour recueillir de la lumière en provenance d'une zone spatialement distincte d'une image de champ conjuguée à la surface de la tranche. Des signaux spectraux sélectionnés associés à des régions souhaitées de l'image de la tranche sont sélectionnés en vue de leur analyse.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)