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1. (WO2018044815) ANALOG FERROELECTRIC MEMORY WITH IMPROVED TEMPERATURE RANGE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/044815 International Application No.: PCT/US2017/048958
Publication Date: 08.03.2018 International Filing Date: 28.08.2017
IPC:
G11C 11/22 (2006.01) ,G11C 11/16 (2006.01) ,G11C 11/4096 (2006.01) ,G11C 11/419 (2006.01) ,G11C 11/56 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
22
using ferroelectric elements
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02
using magnetic elements
16
using elements in which the storage effect is based on magnetic spin effect
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
34
using semiconductor devices
40
using transistors
401
forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063
Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407
for memory cells of the field-effect type
409
Read-write (R-W) circuits
4096
Input/output (I/O) data management or control circuits, e.g. reading or writing circuits, I/O drivers, bit-line switches
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
34
using semiconductor devices
40
using transistors
41
forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
413
Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
417
for memory cells of the field-effect type
419
Read-write (R-W) circuits
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56
using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
Applicants: RADIANT TECHNOLOGIES, INC.[US/US]; 2835 Pan American Fwy NE, Suite D Albuquerque, NM 87107-1652, US
Inventors: EVANS, Joseph, T., Jr.; US
WARD, Calvin, B.; US
Agent: WARD, Calvin, B.; US
Priority Data:
15/252,14630.08.2016US
Title (EN) ANALOG FERROELECTRIC MEMORY WITH IMPROVED TEMPERATURE RANGE
(FR) MÉMOIRE FERROÉLECTRIQUE ANALOGIQUE À PLAGE DE TEMPÉRATURE AMÉLIORÉE
Abstract:
(EN) A ferroelectric memory and a method for operating a ferroelectric memory are disclosed. The ferroelectric memory includes a ferroelectric memory cell having a ferroelectric capacitor characterized by a maximum remanent charge, Qmax. A write circuit receives a data value having more than two states for storage in the ferroelectric capacitor. The write circuit measures Qmax for the ferroelectric capacitor, determines a charge that is a fraction of the measured Qmax to be stored in the ferroelectric capacitor, the fraction being determined by the data value. The write circuit causes a charge equal to the fraction times Qmax to be stored in the ferroelectric capacitor. A read circuit determines a value stored in the ferroelectric capacitor by measuring a charge stored in the ferroelectric capacitor, measuring Qmax for the ferroelectric capacitor, and determining the data value from the measured charge and the measured Qmax.
(FR) La présente invention concerne une mémoire ferroélectrique et un procédé de fonctionnement d'une mémoire ferroélectrique. La mémoire ferroélectrique comprend une cellule de mémoire ferroélectrique ayant un condensateur ferroélectrique caractérisé par une charge rémanente maximale, Q max . Un circuit d'écriture reçoit une valeur de données ayant plus de deux états pour un stockage dans le condensateur ferroélectrique. Le circuit d'écriture mesure Q max pour le condensateur ferroélectrique, détermine une charge qui est une fraction de la valeur Q max devant être stockée dans le condensateur ferroélectrique, la fraction étant déterminée par la valeur de données. Le circuit d'écriture provoque le stockage d'une charge égale aux temps de fraction Q max dans le condensateur ferroélectrique. Un circuit de lecture détermine une valeur stockée dans le condensateur ferroélectrique en mesurant une charge stockée dans le condensateur ferroélectrique, en mesurant Q max pour le condensateur ferroélectrique, et en déterminant la valeur de données à partir de la charge mesurée et de la valeur Q max mesurée
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)