Search International and National Patent Collections

1. (WO2018044713) METHOD OF QUASI-ATOMIC LAYER ETCHING OF SILICON NITRIDE

Pub. No.:    WO/2018/044713    International Application No.:    PCT/US2017/048600
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Sat Aug 26 01:59:59 CEST 2017
IPC: H01L 21/3065
H01L 21/3213
H01L 21/311
Applicants: TOKYO ELECTRON LIMITED
TOKYO ELECTRON U.S. HOLDINGS, INC.
Inventors: SHERPA, Sonam D.
RANJAN, Alok
Title: METHOD OF QUASI-ATOMIC LAYER ETCHING OF SILICON NITRIDE
Abstract:
A method of etching is described. The method includes providing a substrate having a first material containing silicon nitride and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing N, F, O, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.