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1. (WO2018044712) PRECURSORS AND FLOWABLE CVD METHODS FOR MAKING LOW-K FILMS TO FILL SURFACE FEATURES

Pub. No.:    WO/2018/044712    International Application No.:    PCT/US2017/048599
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Sat Aug 26 01:59:59 CEST 2017
IPC: C23C 16/40
C23C 16/34
C23C 16/32
C23C 16/30
C23C 16/50
C23C 16/56
H01L 21/02
Applicants: VERSUM MATERIALS US, LLC
Inventors: LI, Jianheng
VRTIS, Raymond, Nicholas
RIDGEWAY, Robert, Gordon
XIAO, Manchao
LEI, Xinjian
Title: PRECURSORS AND FLOWABLE CVD METHODS FOR MAKING LOW-K FILMS TO FILL SURFACE FEATURES
Abstract:
A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about -20 °C to about 400 °C; introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.