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1. (WO2018044257) RESISTIVE RANDOM ACCESS MEMORY DEVICES
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Pub. No.: WO/2018/044257 International Application No.: PCT/US2016/049197
Publication Date: 08.03.2018 International Filing Date: 29.08.2016
IPC:
H01L 45/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054-1549, US
Inventors:
MAJHI, Prashant; US
PILLARISETTY, Ravi; US
KARPOV, Elijah V.; US
MUKHERJEE, Niloy; US
CLARKE, James S.; US
Agent:
ZAGER, Laura A.; US
Priority Data:
Title (EN) RESISTIVE RANDOM ACCESS MEMORY DEVICES
(FR) DISPOSITIFS DE MÉMOIRE VIVE RÉSISTIVE
Abstract:
(EN) Disclosed herein are resistive random access memory (RRAM) devices, and related memory cells and electronic devices. In some embodiments, an RRAM device may include a bottom electrode, an oxygen exchange layer (OEL), and an oxide layer. The bottom electrode may be disposed between the OEL and a substrate, and the OEL may be disposed between the oxide layer and the bottom electrode.
(FR) L'invention concerne des dispositifs de mémoire vive résistive (RRAM), et des cellules de mémoire et des dispositifs électroniques associés. Dans certains modes de réalisation, un dispositif RRAM peut comprendre une électrode inférieure, une couche d'échange d'oxygène (OEL) et une couche d'oxyde. L'électrode inférieure peut être disposée entre l'OEL et un substrat, et l'OEL peut être disposée entre la couche d'oxyde et l'électrode inférieure.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)