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1. (WO2018044255) RESISTIVE RANDOM ACCESS MEMORY DEVICES

Pub. No.:    WO/2018/044255    International Application No.:    PCT/US2016/049195
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Tue Aug 30 01:59:59 CEST 2016
IPC: H01L 45/00
Applicants: INTEL CORPORATION
Inventors: PILLARISETTY, Ravi
KARPOV, Elijah V.
MUKHERJEE, Niloy
CLARKE, James S.
MAJHI, Prashant
Title: RESISTIVE RANDOM ACCESS MEMORY DEVICES
Abstract:
Disclosed herein are resistive random access memory (RRAM) devices, and related memory cells and electronic devices. In some embodiments, an RRAM device may include a bottom electrode, an oxygen exchange layer (OEL), and an oxide layer. The bottom electrode may be disposed between the OEL and a substrate, and the OEL may be disposed between the oxide layer and the bottom electrode.