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1. (WO2018043888) FILM TYPE SEMICONDUCTOR SEALING MEMBER, SEMICONDUCTOR PACKAGE MANUFACTURED USING SAME, AND MANUFACTURING METHOD THEREFOR
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Pub. No.: WO/2018/043888 International Application No.: PCT/KR2017/006526
Publication Date: 08.03.2018 International Filing Date: 21.06.2017
IPC:
H01L 23/31 (2006.01) ,H01L 23/29 (2006.01) ,H01L 21/56 (2006.01) ,H01L 23/498 (2006.01) ,H01L 25/065 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
28
Encapsulation, e.g. encapsulating layers, coatings
31
characterised by the arrangement
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
28
Encapsulation, e.g. encapsulating layers, coatings
29
characterised by the material
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
56
Encapsulations, e.g. encapsulating layers, coatings
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
488
consisting of soldered or bonded constructions
498
Leads on insulating substrates
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
065
the devices being of a type provided for in group H01L27/78
Applicants:
삼성에스디아이 주식회사 SAMSUNG SDI CO., LTD. [KR/KR]; 경기도 용인시 기흥구 공세로 150-20 150-20, Gongse-ro, Giheung-gu Yongin-si Gyeonggi-do 17084, KR
Inventors:
권기혁 KWON, Ki Hyeok; KR
이윤만 LEE, Yoon Man; KR
Agent:
특허법인 아주 AJU INTERNATIONAL LAW & PATENT GROUP; 서울시 서초구 사임당로 174, 강남미래타워 12-13층 12-13th Floor, Gangnam Mirae Tower, 174 Saimdang- Ro Seocho-Gu Seoul 06627, KR
Priority Data:
10-2016-011084630.08.2016KR
Title (EN) FILM TYPE SEMICONDUCTOR SEALING MEMBER, SEMICONDUCTOR PACKAGE MANUFACTURED USING SAME, AND MANUFACTURING METHOD THEREFOR
(FR) ÉLÉMENT D'ÉTANCHÉITÉ DE SEMI-CONDUCTEUR DE TYPE FILM, BOÎTIER DE SEMI-CONDUCTEUR FABRIQUÉ À L'AIDE DE CELUI-CI, ET PROCÉDÉ DE FABRICATION
(KO) 필름형 반도체 밀봉 부재, 이를 이용하여 제조된 반도체 패키지 및 그 제조방법
Abstract:
(EN) The present invention relates to a film type semiconductor sealing member, a semiconductor package manufactured using the same, and a manufacturing method therefor, the member comprising: a first layer made of a glass woven fabric; a second layer formed on the first layer and including a first epoxy resin and a first inorganic filler; and a third layer formed under the first layer and including a second epoxy resin and a second inorganic filler, wherein the third layer is thicker than the second layer.
(FR) La présente invention concerne un élément d'étanchéité de semi-conducteur de type film, un boîtier de semi-conducteur fabriqué à l'aide de celui-ci, et un procédé de fabrication, l'élément comprenant : une première couche constituée d'un tissu de verre tissé; une seconde couche formée sur la première couche et comprenant une première résine époxy et une première matière de charge inorganique; et une troisième couche formée sous la première couche et comprenant une deuxième résine époxy et une deuxième matière de charge inorganique, la troisième couche étant plus épaisse que la deuxième couche.
(KO) 본 발명은, 유리 직물로 이루어진 제1층; 상기 제1층의 상부에 형성되고, 제1에폭시 수지 및 제1무기 충전제를 포함하는 제2층; 상기 제1층의 하부에 형성되고, 제2에폭시 수지 및 제2무기 충전제를 포함하는 제3층을 포함하며, 상기 제3층의 두께가 상기 제2층의 두께보다 두꺼운 필름형 반도체 밀봉 부재, 이를 이용하여 제조된 반도체 패키지 및 그 제조방법에 관한 것이다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)