WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Options
Query Language
Stem
Sort by:
List Length
Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2018043695) SOLUTION, SOLUTION ACCOMMODATING BODY, ACTIVE LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICES
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/043695 International Application No.: PCT/JP2017/031543
Publication Date: 08.03.2018 International Filing Date: 01.09.2017
IPC:
G03F 7/16 (2006.01) ,G03F 7/004 (2006.01) ,G03F 7/038 (2006.01) ,G03F 7/039 (2006.01) ,G03F 7/32 (2006.01) ,H01L 21/027 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
16
Coating processes; Apparatus therefor
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
038
Macromolecular compounds which are rendered insoluble or differentially wettable
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26
Processing photosensitive materials; Apparatus therefor
30
Imagewise removal using liquid means
32
Liquid compositions therefor, e.g. developers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
Applicants: FUJIFILM CORPORATION[JP/JP]; 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors: KAMIMURA Tetsuya; JP
Agent: WATANABE Mochitoshi; JP
MIWA Haruko; JP
ITOH Hideaki; JP
MITSUHASHI Fumio; JP
Priority Data:
2016-17223902.09.2016JP
2017-16646131.08.2017JP
Title (EN) SOLUTION, SOLUTION ACCOMMODATING BODY, ACTIVE LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICES
(FR) SOLUTION, RÉCEPTACLE POUR SOLUTION, COMPOSITION DE RÉSINE SENSIBLE À LA LUMIÈRE ACTIVE OU SENSIBLE AU RAYONNEMENT, PROCÉDÉ DE FORMATION DE MOTIF, ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEURS
(JA) 溶液、溶液収容体、感活性光線性又は感放射線性樹脂組成物、パターン形成方法、半導体デバイスの製造方法
Abstract:
(EN) The present invention addresses the problem of providing a solution which includes, as a main component (at least 98 mass%), an organic solvent, and which exhibits an excellent ability to inhibit defects. The present invention also addresses the problem of providing: a solution accommodating body in which the solution is accommodated; an active light-sensitive or radiation-sensitive resin composition including the solution; and a pattern formation method and a method for producing semiconductor devices which use the solution. This solution is provided with at least one organic solvent having a boiling point of less than 200˚C, and an organic impurity having a boiling point of at least 250˚C. The organic solvent content is at least 98 mass% of the total mass of the solution. The organic impurity content is at least 0.1 ppm by mass but less than 100 ppm by mass with respect to the total mass of the solution.
(FR) L’invention a pour objet de fournir une solution qui comprend un solvant organique en tant que composant principal (98% en masse ou plus), et qui se révèle excellente en termes de capacité d’inhibition des défauts. L’invention a également pour objet de fournir un réceptacle pour solution recevant ladite solution, une composition de résine sensible à la lumière active ou sensible au rayonnement comprenant ladite solution, et un procédé de formation de motif ainsi qu’un procédé de fabrication de dispositif à semi-conducteurs qui mettent en œuvre ladite solution. La solution de l’invention possède au moins une sorte de solvant organique de point d’ébullition inférieur à 200°C, et des impuretés organiques de point d’ébullition supérieur ou égal à 250°C. La teneur en solvant organique est supérieure ou égale à 98% en masse, et la teneur en impuretés organiques est supérieure ou égale à 0,1ppm en masse et inférieure à 100ppm en masse, pour l’ensemble de la masse de la solution.
(JA) 【課題】 本発明の課題は、有機溶媒を主成分(98質量%以上)として含有し、欠陥抑制能に優れた溶液を提供することである。 本発明の他の課題は、上記溶液を収容した溶液収容体、上記溶液を含有する感活性光線性又は感放射線性樹脂組成物、並びに、上記溶液を用いたパターン形成方法及び半導体デバイスの製造方法を提供することである。 本発明の溶液は、沸点が200℃未満の有機溶媒を少なくとも1種と、沸点が250℃以上の有機不純物と、を有する溶液であり、 上記有機溶媒の含有量が、溶液全質量に対して98質量%以上であり、 上記有機不純物の含有量が、溶液全質量に対して0.1質量ppm以上100質量ppm未満である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)