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1. (WO2018043523) METHOD FOR FORMING BORON DIFFUSION LAYER AND PHOSPHORUS DIFFUSION LAYER
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/043523 International Application No.: PCT/JP2017/031053
Publication Date: 08.03.2018 International Filing Date: 30.08.2017
IPC:
H01L 21/225 (2006.01) ,H01L 21/223 (2006.01) ,H01L 31/068 (2012.01) ,H01L 31/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22
Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
225
using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22
Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
223
using diffusion into, or out of, a solid from or into a gaseous phase
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
068
the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants: PANASONIC PRODUCTION ENGINEERING CO., LTD.[JP/JP]; 2-7, Matsuba-cho, Kadoma-shi, Osaka 5718502, JP
Inventors: KATO, Futoshi; --
AONO, Ryota; --
GODA, Shinji; --
Agent: WASHIDA, Kimihito; JP
Priority Data:
2016-16883831.08.2016JP
Title (EN) METHOD FOR FORMING BORON DIFFUSION LAYER AND PHOSPHORUS DIFFUSION LAYER
(FR) PROCÉDÉ DE FORMATION D'UNE COUCHE DE DIFFUSION DE BORE ET D'UNE COUCHE DE DIFFUSION DE PHOSPHORE
(JA) ボロン拡散層およびリン拡散層の形成方法
Abstract:
(EN) The present invention addresses the problem of suppressing the production cost of a bifacial solar cell, thereby improving the productivity. A method for forming a boron diffusion layer 3 and a phosphorus diffusion layer 7 according to the present invention carries out in a single batch: a first step wherein after applying a material 2 containing a boron compound to a plurality of substrates W and carrying in a pair of substrates WG into a diffusion furnace in such a state where substrate surfaces coated with the material 2 containing a boron compound are in contact with each other, the material 2 containing a boron compound and the atmospheric gas are caused to react with each other, thereby performing oxidation of boron and ashing of organic matters contained in the material containing a boron compound; a second step wherein a boron diffusion layer 3 is formed on one surface of the substrate; a third step wherein a boron silicate glass layer 4 is formed on the boron diffusion layer; a fourth step wherein a phosphorus diffusion layer 7 is formed on the other surface of the substrate; and a fifth step wherein the surface of the phosphorus diffusion layer 7 is oxidized.
(FR) La présente invention aborde le problème de suppression du coût de production d'une cellule solaire bifaciale, ce qui permet d'améliorer la productivité. Un procédé de formation d'une couche de diffusion de bore 3 et d'une couche de diffusion de phosphore 7 selon la présente invention réalise en un seul lot : une première étape au cours de laquelle après l'application d'un matériau 2 contenant un composé de bore à une pluralité de substrats W et le transport d'une paire de substrats WG dans un four à diffusion dans un état dans lequel des surfaces de substrat revêtues du matériau 2 contenant un composé de bore sont en contact les unes avec les autres, le matériau 2 contenant un composé de bore et le gaz atmosphérique sont amenés à réagir l'un avec l'autre, ce qui permet d'effectuer l'oxydation du bore et la calcination de matières organiques contenues dans le matériau contenant un composé de bore ; une deuxième étape au cours de laquelle une couche de diffusion de bore 3 est formée sur une surface du substrat ; une troisième étape au cours de laquelle une couche de verre de silicate de bore 4 est formée sur la couche de diffusion de bore ; une quatrième étape au cours de laquelle une couche de diffusion de phosphore 7 est formée sur l'autre surface du substrat ; et une cinquième étape au cours de laquelle la surface de la couche de diffusion de phosphore 7 est oxydée.
(JA) 両面受光型太陽電池セルの製造コストを抑制し、生産性を向上させることを課題とする。 ボロン拡散層3およびリン拡散層7の形成方法において、ボロン化合物を含む材料2を複数の基板Wに塗布し、ボロン化合物を含む材料2を塗布した面同士を当接させた状態の一対の基板WGを拡散炉に搬入した後、ボロン化合物を含む材料2と雰囲気ガスとを反応させ、該ボロン化合物を含む材料に含まれる有機物の灰化およびボロンの酸化を行う第1のステップと、ボロン拡散層3を前記基板の一方の面側に形成する第2のステップと、前記ボロン拡散層の上にボロンシリケートガラス層4を形成する第3のステップと、リン拡散層7を前記基板の他方の面側に形成する第4のステップと、リン拡散層7の表面を酸化する第5のステップとを同一バッチにて実施する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)