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1. (WO2018043478) THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION ELEMENT AND THERMOELECTRIC CONVERSION MODULE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.:    WO/2018/043478    International Application No.:    PCT/JP2017/030903
Publication Date: 08.03.2018 International Filing Date: 29.08.2017
IPC:
H01L 35/14 (2006.01), C01B 33/06 (2006.01)
Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP/JP]; 5-33, Kitahama 4-chome, Chuo-ku, Osaka-shi, Osaka 5410041 (JP).
TOYOTA SCHOOL FOUNDATION [JP/JP]; 2-12-1, Hisakata, Tempaku-ku, Nagoya-shi, Aichi 4688511 (JP)
Inventors: ADACHI, Masahiro; (JP).
KIYAMA, Makoto; (JP).
YAMAMOTO, Yoshiyuki; (JP).
TAKEUCHI, Tsunehiro; (JP)
Agent: FUKAMI PATENT OFFICE, P.C.; Nakanoshima Festival Tower West, 2-4, Nakanoshima 3-chome, Kita-ku, Osaka-shi, Osaka 5300005 (JP)
Priority Data:
2016-169406 31.08.2016 JP
Title (EN) THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION ELEMENT AND THERMOELECTRIC CONVERSION MODULE
(FR) MATÉRIAU DE CONVERSION THERMOÉLECTRIQUE, ÉLÉMENT DE CONVERSION THERMOÉLECTRIQUE ET MODULE DE CONVERSION THERMOÉLECTRIQUE
(JA) 熱電変換材料、熱電変換素子および熱電変換モジュール
Abstract: front page image
(EN)This thermoelectric conversion material includes a base material that is a semiconductor, and an additive element that differs from an element that constitutes the base material. In a forbidden band of the base material, an additive band formed by the additive element exists. A state density of the additive band has a ratio of 0.1 or greater with respect to the maximum value of a state density of a valence band adjacent to the forbidden band of the base material.
(FR)La présente invention concerne un matériau de conversion thermoélectrique qui comprend un matériau de base qui est un semi-conducteur, et un élément additif qui diffère d’un élément qui constitue le matériau de base. Dans une bande interdite du matériau de base est située une bande additive formée par l’élément additif. Une densité d’état de la bande additive a un rapport de 0,1 ou plus par rapport à la valeur maximale d’une densité d’état d’une bande de valence adjacente à la bande interdite du matériau de base.
(JA)熱電変換材料は、半導体であるベース材料と、ベース材料を構成する元素とは異なる元素である添加元素と、を含む。ベース材料の禁制帯内に、添加元素により形成される付加バンドが存在する。付加バンドの状態密度は、ベース材料の禁制帯に隣接する価電子帯の状態密度の最大値に対して0.1以上の比率を有する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)