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1. (WO2018043472) ACTIVE MATRIX SUBSTRATE AND METHOD FOR MANUFACTURING SAME

Pub. No.:    WO/2018/043472    International Application No.:    PCT/JP2017/030892
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Wed Aug 30 01:59:59 CEST 2017
IPC: H01L 29/786
G02F 1/1368
G09F 9/30
H01L 21/336
H01L 27/32
H01L 51/50
H05B 33/28
Applicants: SHARP KABUSHIKI KAISHA
シャープ株式会社
Inventors: OKADA Kuniaki
岡田 訓明
Title: ACTIVE MATRIX SUBSTRATE AND METHOD FOR MANUFACTURING SAME
Abstract:
An active matrix substrate (100) has the following: a substrate (12); a first thin film transistor (10A) that is supported on the substrate (12) and that has a first semiconductor layer (13A) containing crystalline silicon; a second thin film transistor (10B) that is supported on the substrate (12) and that has a second semiconductor layer (17) containing an oxide semiconductor; and a third semiconductor layer (13B) containing silicon, which is disposed on the substrate (12) side of the second semiconductor layer (17) of the second thin film transistor (10B), with a first insulating layer (14) interposed between the third semiconductor layer and the second semiconductor layer.