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1. (WO2018043440) PROCESSING LIQUID, SUBSTRATE CLEANING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICES
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Pub. No.: WO/2018/043440 International Application No.: PCT/JP2017/030820
Publication Date: 08.03.2018 International Filing Date: 29.08.2017
IPC:
H01L 21/304 (2006.01) ,C11D 7/26 (2006.01) ,C11D 7/32 (2006.01) ,C11D 7/34 (2006.01) ,C11D 7/36 (2006.01) ,C11D 7/50 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
C CHEMISTRY; METALLURGY
11
ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
D
DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
7
Compositions of detergents based essentially on non-surface-active compounds
22
Organic compounds
26
containing oxygen
C CHEMISTRY; METALLURGY
11
ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
D
DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
7
Compositions of detergents based essentially on non-surface-active compounds
22
Organic compounds
32
containing nitrogen
C CHEMISTRY; METALLURGY
11
ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
D
DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
7
Compositions of detergents based essentially on non-surface-active compounds
22
Organic compounds
34
containing sulfur
C CHEMISTRY; METALLURGY
11
ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
D
DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
7
Compositions of detergents based essentially on non-surface-active compounds
22
Organic compounds
36
containing phosphorus
C CHEMISTRY; METALLURGY
11
ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
D
DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
7
Compositions of detergents based essentially on non-surface-active compounds
50
Solvents
Applicants:
富士フイルム株式会社 FUJIFILM CORPORATION [JP/JP]; 東京都港区西麻布2丁目26番30号 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors:
上村 哲也 KAMIMURA Tetsuya; JP
高橋 智威 TAKAHASHI Tomonori; JP
Agent:
渡辺 望稔 WATANABE Mochitoshi; JP
三和 晴子 MIWA Haruko; JP
伊東 秀明 ITOH Hideaki; JP
三橋 史生 MITSUHASHI Fumio; JP
Priority Data:
2016-16977331.08.2016JP
Title (EN) PROCESSING LIQUID, SUBSTRATE CLEANING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICES
(FR) LIQUIDE DE TRAITEMENT, PROCÉDÉ DE NETTOYAGE DE SUBSTRAT, ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEURS
(JA) 処理液、基板の洗浄方法、半導体デバイスの製造方法
Abstract:
(EN) [Problem] To provide: a processing liquid for semiconductor devices which exhibits excellent stability over time with respect to residue removal performance, and which exhibits excellent corrosion prevention performance with respect to objects to be processed; a substrate cleaning method which uses said processing liquid; and a method for producing semiconductor devices. [Solution] This processing liquid for semiconductor devices includes: at least one hydroxylamine compound selected from the group consisting of hydroxylamines and hydroxylamine salts; at least one basic compound selected from the group consisting of amine compounds different to the hydroxylamine compound, and quaternary ammonium hydroxide salts; and at least one selected from the group consisting of reductants different to the hydroxylamine compound, and chelating agents. The processing liquid has a pH of 10 or higher.
(FR) L’invention a pour objet de fournir un liquide de traitement qui est destiné à un dispositif à semi-conducteurs, et qui se révèle excellent en termes de stabilité au cours du temps de ses performances d’élimination de résidu et en termes de performances de protection contre la corrosion vis-à-vis d’un objet à traiter. En outre, l’invention a pour objet de fournir un procédé de nettoyage de substrat mettant en œuvre ledit liquide de traitement, et un procédé de fabrication de dispositif à semi-conducteurs. Le liquide de traitement de l’invention consiste en un liquide de traitement qui est destiné à un dispositif à semi-conducteurs, et comprend : au moins une sorte de composé hydroxylamine choisie dans un groupe constitué d’une hydroxylamine et d’un sel d’hydroxylamine ; au moins une sorte de composé basique choisie dans un groupe constitué d’un composé amine distinct dudit composé hydroxylamine et d’un sel d’hydroxyde d’ammonium quaternaire ; et au moins un élément choisi dans un groupe constitué d’un agent de réduction distinct dudit composé hydroxylamine et d’un agent chélatant. Le pH de ce liquide de traitement est supérieur ou égal à 10.
(JA) 【課題】本発明の課題は、半導体デバイス用の処理液であって、残渣物除去性能の経時安定性に優れ、且つ、処理対象物に対する腐食防止性能にも優れた処理液を提供することである。また、上記処理液を用いた基板の洗浄方法、及び、半導体デバイスの製造方法を提供することである。 本発明の処理液は、半導体デバイス用の処理液であって、ヒドロキシルアミン及びヒドロキシルアミン塩からなる群より選ばれる少なくとも1種のヒドロキシルアミン化合物と、上記ヒドロキシルアミン化合物とは異なるアミン化合物、及び四級水酸化アンモニウム塩からなる群より選ばれる少なくとも1種の塩基化合物と、上記ヒドロキシルアミン化合物とは異なる還元剤、及びキレート剤からなる群より選ばれる少なくとも1種と、を含有し、pHが10以上である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)