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1. (WO2018043440) PROCESSING LIQUID, SUBSTRATE CLEANING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICES

Pub. No.:    WO/2018/043440    International Application No.:    PCT/JP2017/030820
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Wed Aug 30 01:59:59 CEST 2017
IPC: H01L 21/304
C11D 7/26
C11D 7/32
C11D 7/34
C11D 7/36
C11D 7/50
Applicants: FUJIFILM CORPORATION
富士フイルム株式会社
Inventors: KAMIMURA Tetsuya
上村 哲也
TAKAHASHI Tomonori
高橋 智威
Title: PROCESSING LIQUID, SUBSTRATE CLEANING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICES
Abstract:
[Problem] To provide: a processing liquid for semiconductor devices which exhibits excellent stability over time with respect to residue removal performance, and which exhibits excellent corrosion prevention performance with respect to objects to be processed; a substrate cleaning method which uses said processing liquid; and a method for producing semiconductor devices. [Solution] This processing liquid for semiconductor devices includes: at least one hydroxylamine compound selected from the group consisting of hydroxylamines and hydroxylamine salts; at least one basic compound selected from the group consisting of amine compounds different to the hydroxylamine compound, and quaternary ammonium hydroxide salts; and at least one selected from the group consisting of reductants different to the hydroxylamine compound, and chelating agents. The processing liquid has a pH of 10 or higher.