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|1. (WO2018043410) RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING TRIARYLDIAMINE-CONTAINING NOVOLAC RESIN|
|Applicants:||NISSAN CHEMICAL CORPORATION
|Title:||RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING TRIARYLDIAMINE-CONTAINING NOVOLAC RESIN|
[Problem] To provide a material for forming a resist underlayer film that is used in a lithography process and has heat resistance, planarization properties and etching resistance at the same time. [Solution] A resist underlayer film forming composition which contains a polymer that comprises a unit structure represented by formula (1). (In formula (1), R1 represents an organic group that contains at least two amines and at least three aromatic rings having 6 to 40 carbon atoms; each of R2 and R3 represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 40 carbon atoms, a heterocyclic group or a combination of these groups, and the alkyl group, the aryl group and the heterocyclic group may be substituted by a halogen group, a nitro group, an amino group, a formyl group, an alkoxy group or a hydroxy group; or alternatively, R2 and R3 may combine with each other to form a ring.) The above-described composition wherein R1 is a divalent organic group derived from N, N'-diphenyl-1, 4-phenylenediamine.