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1. (WO2018043410) RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING TRIARYLDIAMINE-CONTAINING NOVOLAC RESIN

Pub. No.:    WO/2018/043410    International Application No.:    PCT/JP2017/030758
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Tue Aug 29 01:59:59 CEST 2017
IPC: G03F 7/11
C08G 12/08
G03F 7/20
G03F 7/40
H01L 21/3065
Applicants: NISSAN CHEMICAL CORPORATION
日産化学株式会社
Inventors: Saito, Daigo
齊藤 大悟
HASHIMOTO, Keisuke
橋本 圭祐
SAKAMOTO, Rikimaru
坂本 力丸
Title: RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING TRIARYLDIAMINE-CONTAINING NOVOLAC RESIN
Abstract:
[Problem] To provide a material for forming a resist underlayer film that is used in a lithography process and has heat resistance, planarization properties and etching resistance at the same time. [Solution] A resist underlayer film forming composition which contains a polymer that comprises a unit structure represented by formula (1). (In formula (1), R1 represents an organic group that contains at least two amines and at least three aromatic rings having 6 to 40 carbon atoms; each of R2 and R3 represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 40 carbon atoms, a heterocyclic group or a combination of these groups, and the alkyl group, the aryl group and the heterocyclic group may be substituted by a halogen group, a nitro group, an amino group, a formyl group, an alkoxy group or a hydroxy group; or alternatively, R2 and R3 may combine with each other to form a ring.) The above-described composition wherein R1 is a divalent organic group derived from N, N'-diphenyl-1, 4-phenylenediamine.