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1. (WO2018043377) METHOD FOR PRODUCING MAGNETIC MEMORY COMPRISING MAGNETIC TUNNEL JUNCTION ELEMENT
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Pub. No.: WO/2018/043377 International Application No.: PCT/JP2017/030682
Publication Date: 08.03.2018 International Filing Date: 28.08.2017
IPC:
H01L 43/12 (2006.01) ,H01L 21/8239 (2006.01) ,H01L 27/105 (2006.01) ,H01L 43/08 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
Applicants:
国立大学法人東北大学 TOHOKU UNIVERSITY [JP/JP]; 宮城県仙台市青葉区片平二丁目1番1号 1-1, Katahira 2-chome, Aoba-ku, Sendai-shi, Miyagi 9808577, JP
Inventors:
伊藤 顕知 ITO Kenchi; JP
遠藤 哲郎 ENDOH Tetsuo; JP
池田 正二 IKEDA Shoji; JP
佐藤 英夫 SATO Hideo; JP
大野 英男 OHNO Hideo; JP
三浦 貞彦 MIURA Sadahiko; JP
丹羽 正昭 NIWA Masaaki; JP
本庄 弘明 HONJO Hiroaki; JP
Agent:
特許業務法人 英知国際特許事務所 EICHI PATENT & TRADEMARK CORP.; 東京都文京区千石4丁目45番13号 45-13, Sengoku 4-chome, Bunkyo-ku, Tokyo 1120011, JP
Priority Data:
2016-17003231.08.2016JP
Title (EN) METHOD FOR PRODUCING MAGNETIC MEMORY COMPRISING MAGNETIC TUNNEL JUNCTION ELEMENT
(FR) PROCÉDÉ DE PRODUCTION D'UNE MÉMOIRE MAGNÉTIQUE COMPRENANT UN ÉLÉMENT À JONCTION TUNNEL MAGNÉTIQUE
(JA) 磁気トンネル接合素子を備える磁気メモリの製造方法
Abstract:
(EN) Provided is a method for producing a magnetic memory, by which a magnetic memory comprising a magnetic tunnel junction element that exhibits a high element performance is able to be easily produced. This method for producing a magnetic memory comprising a magnetic tunnel junction element comprises: a step for forming a magnetic film on a substrate that is provided with an electrode layer, said magnetic film comprising a non-magnetic layer between a first magnetic layer and a second magnetic layer; a magnetic-field annealing step wherein an annealing treatment is performed at a first treatment temperature in a vacuum, while applying a magnetic field in a direction perpendicular to the film surface of the first magnetic layer or the second magnetic layer; a step for forming a magnetic tunnel junction element; a protective film formation step for forming a protective film that protects the magnetic tunnel junction element; a formation step accompanied with a thermal history, wherein a constituent element of a magnetic memory is formed on the substrate, which has been provided with the protective film, after the protective film formation step; and a non-magnetic-field annealing step wherein the substrate is subjected to an annealing treatment at a second treatment temperature that is lower than the first treatment temperature in a vacuum or in an inert gas in an annealing treatment chamber without applying a magnetic field thereto.
(FR) L'invention concerne un procédé de production d'une mémoire magnétique, au moyen duquel une mémoire magnétique comprenant un élément à jonction tunnel magnétique qui présente une performance d'élément élevée peut être facilement produite. Ce procédé de production d'une mémoire magnétique comprenant un élément à jonction tunnel magnétique comprend : une étape de formation d'un film magnétique sur un substrat qui est pourvu d'une couche d'électrode, ledit film magnétique comprenant une couche non magnétique entre une première couche magnétique et une seconde couche magnétique ; une étape de recuit en champ magnétique au cours de laquelle un traitement de recuit est effectué à une première température de traitement sous vide, tout en appliquant un champ magnétique dans une direction perpendiculaire à la surface de film de la première couche magnétique ou de la seconde couche magnétique ; une étape de formation d'un élément à jonction tunnel magnétique ; une étape de formation de film de protection pour former un film de protection qui protège l'élément à jonction tunnel magnétique ; une étape de formation accompagnée d'un historique thermique, un élément constitutif d'une mémoire magnétique étant formé sur le substrat, qui a été pourvu du film de protection, après l'étape de formation de film de protection ; et une étape de recuit en champ non magnétique au cours de laquelle le substrat est soumis à un traitement de recuit à une seconde température de traitement qui est inférieure à la première température de traitement sous vide ou dans un gaz inerte dans une chambre de traitement de recuit sans appliquer de champ magnétique à celui-ci.
(JA) 高い素子性能を有する磁気トンネル接合素子を備える磁気メモリを簡単に製造可能な磁気メモリの製造方法を提供する。磁気トンネル接合素子を備える磁気メモリの製造方法は、電極層が設けられた基板に、第1磁性層と第2磁性層との間に非磁性層を備えた磁性膜を形成する工程と、真空中で第1磁性層又は第2磁性層の膜面垂直方向に磁界を印加した状態で、第1処理温度でアニール処理を行う磁場中アニール処理工程と、磁気トンネル接合素子を形成する工程と、磁気トンネル接合素子を保護する保護膜を形成する保護膜形成工程と、保護膜形成工程の後に、保護膜が形成された基板に対して、磁気メモリの構成要素を形成する、熱履歴を伴う形成工程と、アニール処理室にて、真空中又は不活性ガス中、磁場非印加状態で、基板に対して、第1処理温度よりも低い第2処理温度でアニール処理を施す磁場非印加アニール処理工程と、を有する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)