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1. (WO2018043305) BASE MATERIAL SURFACE SELECTIVE MODIFICATION METHOD AND COMPOSITION

Pub. No.:    WO/2018/043305    International Application No.:    PCT/JP2017/030428
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Fri Aug 25 01:59:59 CEST 2017
IPC: H01L 21/312
B05D 3/02
B05D 7/00
H01L 21/3065
Applicants: JSR CORPORATION
JSR株式会社
Inventors: KOMATSU Hiroyuki
小松 裕之
ODA Tomohiro
小田 智博
OSAKI Hitoshi
大▲崎▼ 仁視
HORI Masafumi
堀 雅史
NARUOKA Takehiko
成岡 岳彦
Title: BASE MATERIAL SURFACE SELECTIVE MODIFICATION METHOD AND COMPOSITION
Abstract:
The purpose of the present invention is to provide a selective modification method for base material surfaces and a composition, whereby a surface region including silicon can be modified simply and highly selectively and densely. This selective modification method for base material surfaces comprises: a step in which a base material is prepared that has a first region including silicon, on a surface layer thereof; a step in which a composition is coated on the surface of the base material, said composition including a solvent and a first polymer that has, at the terminal of the main chain or a side chain thereof, a group including a first functional group that bonds with the silicon; and a step in which a coating film formed by the coating step is heated. The first region ideally includes a silicon oxide, a silicon nitride, or a silicon oxide nitride. Ideally, the base material also has a second region different from the first region and including metal, and the selective modification method also comprises a step, after the heating step, in which a section formed on the second region in the coating film is removed by using a rinse fluid.