Search International and National Patent Collections

1. (WO2018043300) SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

Pub. No.:    WO/2018/043300    International Application No.:    PCT/JP2017/030407
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Fri Aug 25 01:59:59 CEST 2017
IPC: H01L 21/336
G01B 11/06
H01L 21/66
H01L 29/12
H01L 29/78
Applicants: DENSO CORPORATION
株式会社デンソー
TOYOTA JIDOSHA KABUSHIKI KAISHA
トヨタ自動車株式会社
Inventors: AMANO Akira
天野 陽
SATOMURA Takayuki
里村 隆幸
TAKEUCHI Yuichi
竹内 有一
SUZUKI Katsumi
鈴木 克己
AOI Sachiko
青井 佐智子
Title: SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
Abstract:
According to the present invention, when the film thickness of a p-type base region (3) is measured, an infrared light is irradiated from a p-type base region (3) side to an n+-type substrate (1) on which the p-type base region (3) and n--type drift layer (2) are grown. Reflection light from an interface between the p-type base region (3) and the n--type drift layer (2) is not used, but inference light made by reflection light from the surface of the p-type base region (3) and reflection light from an interface between the n--type drift layer (2) and the n+-type substrate (1) is measured. This makes it possible to measure a bi-layered film thickness T2, which is a summed thickness of the p-type base region (3) and the n--type drift layer (2). Accordingly, the film thickness of the p-type base region (3) can be calculated by subtracting a mono-layered film thickness T1 of the n-type drift layer (2) from the bi-layered film thickness T2.