Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2018043171) SIC EPITAXIAL WAFER, PRODUCTION METHOD THEREFOR, AND DEFECT IDENTIFICATION METHOD
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2018/043171 International Application No.: PCT/JP2017/029740
Publication Date: 08.03.2018 International Filing Date: 21.08.2017
IPC:
C30B 29/36 (2006.01) ,C23C 16/42 (2006.01) ,C30B 25/20 (2006.01) ,G01N 21/956 (2006.01) ,H01L 21/205 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
36
Carbides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
42
Silicides
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
18
characterised by the substrate
20
the substrate being of the same materials as the epitaxial layer
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21
Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible, or ultra-violet light
84
Systems specially adapted for particular applications
88
Investigating the presence of flaws, defects or contamination
95
characterised by the material or shape of the object to be examined
956
Inspecting patterns on the surface of objects
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants:
昭和電工株式会社 SHOWA DENKO K.K. [JP/JP]; 東京都港区芝大門一丁目13番9号 13-9, Shibadaimon 1-chome, Minato-ku, Tokyo 1058518, JP
Inventors:
郭 玲 GUO Ling; JP
亀井 宏二 KAMEI Koji; JP
Agent:
及川 周 OIKAWA Shu; JP
荒 則彦 ARA Norihiko; JP
勝俣 智夫 KATSUMATA Tomoo; JP
Priority Data:
2016-17019431.08.2016JP
2016-18606223.09.2016JP
Title (EN) SIC EPITAXIAL WAFER, PRODUCTION METHOD THEREFOR, AND DEFECT IDENTIFICATION METHOD
(FR) TRANCHE ÉPITAXIALE DE SIC, SON PROCÉDÉ DE PRODUCTION ET PROCÉDÉ D'IDENTIFICATION DE DÉFAUT
(JA) SiCエピタキシャルウェハ及びその製造方法、並びに、欠陥識別方法
Abstract:
(EN) In this SiC epitaxial wafer, a SiC epitaxial layer is formed on a 4H-SiC single crystal substrate that has an off angle and a substrate carbon inclusion density of 0.1-2.5 atoms/cm2. The SiC epitaxial wafer is characterized in that the total density of large pit defects and triangular defects included in the SiC epitaxial layer as a result of substrate carbon inclusion is 0.6 defects/cm2 or less.
(FR) Selon la présente invention, dans cette tranche épitaxiale de SiC, une couche épitaxiale de SiC est formée sur un substrat monocristallin de 4H-SiC qui a un angle d'inclinaison et une densité d'inclusion de carbone substrat de 0,1 à 2,5 atomes/cm2. La tranche épitaxiale de SiC est caractérisée en ce que la densité totale de grands défauts de creux et de défauts triangulaires compris dans la couche épitaxiale de SiC à la suite de l'inclusion de carbone substrat est de 0,6 défaut/cm2 ou moins.
(JA) このSiCエピタキシャルウェハは、オフ角を有し、0.1~2.5個/cmの基板カーボンインクルージョン密度を有する4H-SiC単結晶基板上にSiCエピタキシャル層が形成されたSiCエピタキシャルウェハであって、前記SiCエピタキシャル層に含まれる、基板カーボンインクルージョン起因のラージピット欠陥および三角欠陥の合計密度が0.6個/cm以下であることを特徴とする。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)