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1. (WO2018043169) SIC EPITAXIAL WAFER, PRODUCTION METHOD THEREFOR, LARGE PIT DEFECT DETECTION METHOD, AND DEFECT IDENTIFICATION METHOD

Pub. No.:    WO/2018/043169    International Application No.:    PCT/JP2017/029718
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Tue Aug 22 01:59:59 CEST 2017
IPC: C30B 29/36
C23C 16/42
C30B 25/20
G01N 21/956
H01L 21/205
Applicants: SHOWA DENKO K.K.
昭和電工株式会社
Inventors: GUO Ling
郭 玲
KAMEI Koji
亀井 宏二
Title: SIC EPITAXIAL WAFER, PRODUCTION METHOD THEREFOR, LARGE PIT DEFECT DETECTION METHOD, AND DEFECT IDENTIFICATION METHOD
Abstract:
In this SiC epitaxial wafer, a SiC epitaxial layer is formed on a 4H-SiC single crystal substrate that has an off angle and a substrate carbon inclusion density of 0.1-6.0 atoms/cm2. The density of large pit defects included in the SiC epitaxial layer as a result of substrate carbon inclusion is 0.5 defects/cm2 or less.