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1. (WO2018043106) METHOD FOR MANUFACTURING THROUGH ELECTRODE SUBSTRATE, THROUGH ELECTRODE SUBSTRATE, AND SEMICONDUCTOR DEVICE

Pub. No.:    WO/2018/043106    International Application No.:    PCT/JP2017/029276
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Tue Aug 15 01:59:59 CEST 2017
IPC: C03B 33/09
B23K 26/382
C03C 15/00
C03C 23/00
H01L 23/15
H01L 23/32
Applicants: DAI NIPPON PRINTING CO., LTD.
大日本印刷株式会社
Inventors: KURAMOCHI Satoru
倉持 悟
Title: METHOD FOR MANUFACTURING THROUGH ELECTRODE SUBSTRATE, THROUGH ELECTRODE SUBSTRATE, AND SEMICONDUCTOR DEVICE
Abstract:
The through electrode substrate according to an embodiment of the present invention includes: a substrate which has a through hole that passes through from a first surface to a second surface and has a diameter that does not have a minimum value inside the hole; and a conductor that is disposed inside the through hole. The through hole satisfies the condition in which the total value of bevel angles (where angles expanding toward the first surface side are positive bevel angles) of the inner surface with respect to the central axis of the through hole at positions at distances 6.25%, 18.75%, 31.25%, 43.75%, 56.25%, 68.75%, 81.25%, and 93.75% from the first surface among sections between the first surface and the second surface is 8.0° or more.