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1. (WO2018043076) INSULATING SUBSTRATE AND SEMICONDUCTOR DEVICE USING SAME

Pub. No.:    WO/2018/043076    International Application No.:    PCT/JP2017/028889
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Thu Aug 10 01:59:59 CEST 2017
IPC: H01L 25/07
H01L 23/12
H01L 25/00
H01L 25/18
H02M 7/48
H05K 1/16
Applicants: HITACHI METALS, LTD.
日立金属株式会社
Inventors: HOZOJI Hiroshi
宝蔵寺 裕之
HAYASHI Kenji
林 健児
ITOH Hiroyuki
伊藤 博之
IMAMURA Hisayuki
今村 寿之
NAGATOMO Hiroyuki
長友 浩之
Title: INSULATING SUBSTRATE AND SEMICONDUCTOR DEVICE USING SAME
Abstract:
In order to address the problem in that, by increasing the gate resistance of a power semiconductor element, while variation of switching time can be controlled, loss due to the gate resistance becomes larger and power efficiency for the entire system is lowered, the present invention provides an insulating substrate capable of uniformizing switching speeds of circuit elements while suppressing influence on power efficiency of the circuit elements. In the insulating substrate according to the present invention, part of a wiring layer is formed as a control signal circuit layer, and part of the control signal circuit layer is formed as a resistance layer that increases input resistance when the circuit element receives a control signal (see fig. 2).