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1. (WO2018042886) LIGHT-RECEIVING ELEMENT, METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT, IMAGING ELEMENT, AND ELECTRONIC DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation
Pub. No.: WO/2018/042886 International Application No.: PCT/JP2017/024983
Publication Date: 08.03.2018 International Filing Date: 07.07.2017
IPC:
H01L 27/146 (2006.01) ,H01L 31/0264 (2006.01) ,H04N 5/369 (2011.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0256
characterised by the material
0264
Inorganic materials
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
Applicants:
ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP/JP]; 神奈川県厚木市旭町四丁目１４番１号 4-14-1, Asahicho, Atsugi-shi, Kanagawa 2430014, JP
Inventors:
吉際　潤 YOSHIGIWA, Jun; JP
Agent:
特許業務法人つばさ国際特許事務所 TSUBASA PATENT PROFESSIONAL CORPORATION; 東京都新宿区新宿１丁目１５番９号さわだビル３階 3F, Sawada Building, 15-9, Shinjuku 1-chome, Shinjuku-ku, Tokyo 1600022, JP
Priority Data:
2016-17195902.09.2016JP
Title (EN) LIGHT-RECEIVING ELEMENT, METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT, IMAGING ELEMENT, AND ELECTRONIC DEVICE
(FR) ÉLÉMENT DE RÉCEPTION DE LUMIÈRE, PROCÉDÉ DE FABRICATION D'ÉLÉMENT DE RÉCEPTION DE LUMIÈRE, ÉLÉMENT D'IMAGERIE, ET DISPOSITIF ÉLECTRONIQUE
(JA) 受光素子、受光素子の製造方法、撮像素子および電子機器
Abstract:
(EN) A light-receiving element provided with: a photoelectric conversion layer including a group III-V semiconductor; a plurality of first-electroconductivity-type regions in which the signal charge generated by the photoelectric conversion layer migrates; and a second-electroconductivity-type region that extends through the photoelectric conversion layer and is provided between adjacent first-electroconductivity-type regions.
(FR) La présente invention concerne un élément de réception de lumière comprenant : une couche de conversion photoélectrique comprenant un semi-conducteur du groupe III-V ; une pluralité de régions de premier type de conductivité électrique dans lesquelles la charge de signal générée par la couche de conversion photoélectrique migre ; et une région de second type de conductivité électrique qui s'étend à travers la couche de conversion photoélectrique et qui est disposée entre des régions de premier type de conductivité électrique adjacentes.
(JA) ＩＩＩ－Ｖ族半導体を含む光電変換層と、前記光電変換層で発生した信号電荷が移動する、複数の第１導電型領域と、前記光電変換層を貫通して、隣り合う前記第１導電型領域の間に設けられた第２導電型領域とを備えた受光素子。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)