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1. (WO2018042876) VAPOR-PHASE GROWTH APPARATUS AND METHOD FOR PRODUCTION OF EPITAXIAL WAFER
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Pub. No.: WO/2018/042876 International Application No.: PCT/JP2017/024821
Publication Date: 08.03.2018 International Filing Date: 06.07.2017
IPC:
H01L 21/205 (2006.01) ,C23C 16/455 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Applicants: SHIN-ETSU HANDOTAI CO.,LTD.[JP/JP]; 2-1, Ohtemachi 2-chome, Chiyoda-ku, Tokyo 1000004, JP
Inventors: OHNISHI, Masato; JP
MASUMURA, Hisashi; JP
Agent: HARIKAWA, Takashi; JP
Priority Data:
2016-17275105.09.2016JP
Title (EN) VAPOR-PHASE GROWTH APPARATUS AND METHOD FOR PRODUCTION OF EPITAXIAL WAFER
(FR) APPAREIL DE CROISSANCE EN PHASE VAPEUR ET PROCÉDÉ DE PRODUCTION DE TRANCHE ÉPITAXIALE
(JA) 気相成長装置及びエピタキシャルウェーハの製造方法
Abstract:
(EN) The vapor-phase growth apparatus 1 according to the present invention is provided with: a reaction furnace 2; an introduction passage 8; multiple flow channels 15a; a branch channel 14a; and divided passages 16b. The reaction furnace 2 uses a gas material to vapor-grow an epitaxial layer on a substrate W. The introduction passage 8 has: an entrance 8a leading into the reaction furnace 2; an exit 8b which is disposed above the entrance 8a and closer to the reaction furnace 2 side as compared with the entrance 8a, and which reaches the reaction furnace 2; and a stepped part 8c disposed within the introduction passage 8. The multiple flow channels 15a are provided in a number equal to or greater than 32, and configured to extend from the entrance 8a to the outside the entrance 8a. The branch channel 14a causes the multiple flow channels 15a to converge in a knockout tournament draw pattern from the entrance 8a side downstream toward the direction of the gas material. The divided passages 16b are formed by dividing the introduction passage 8 so as to correspond to the multiple flow channels 15a, and are configured to be connected to the respective flow channels 15a. This configuration provides a vapor-phase growth apparatus that enables improvement of the uniformity in film thickness of an epitaxial layer to be grown on a substrate.
(FR) L'appareil de croissance en phase vapeur (1) selon la présente invention comprend : un four de réaction (2); un passage d'introduction (8); de multiples canaux d'écoulement (15a); un canal de dérivation (14a); et des passages divisés (16b). Le four de réaction (2) utilise un matériau gazeux pour faire croître en phase vapeur une couche épitaxiale sur un substrat W. Le passage d'introduction (8) comprend: une entrée (8a) débouchant dans le four de réaction (2); une sortie (8b) qui est disposée au-dessus de l'entrée (8a) et plus proche du côté du four de réaction (2) par comparaison à l'entrée (8a), et qui atteint le four de réaction (2); et une partie étagée (8c) disposée à l'intérieur du passage d'introduction (8). Les multiples canaux d'écoulement (15a) sont disposés selon un nombre égal ou supérieur à 32, et configurés pour s'étendre de l'entrée (8a) vers l'extérieur de l'entrée (8a). Le canal de ramification (14a) amène les multiples canaux d'écoulement (15a) à converger dans un motif d'étirage de tournoi d'éjection depuis le côté d'entrée (8a) vers l'aval vers la direction du matériau gazeux. Les passages divisés (16b) sont formés en divisant le passage d'introduction (8) de façon à correspondre aux multiples canaux d'écoulement (15a), et sont configurés pour être connectés aux canaux d'écoulement (15a) respectifs. Cette configuration fournit un appareil de croissance en phase vapeur qui permet d'améliorer l'uniformité de l'épaisseur de film d'une couche épitaxiale devant croître sur un substrat.
(JA) 気相成長装置1は、反応炉2と、導入通路8と、複数の流路15aと、分岐路14aと、分割通路16bと、を備える。反応炉2は、原料ガスにより基板Wにエピタキシャル層を気相成長させる。導入通路8は、反応炉2内に通じる入口8aと、入口8aの上方かつ入口8aより反応炉2側に位置して反応炉2内に至る出口8bと、導入通路8内に位置する段部8cを有する。複数の流路15aは、32本以上であり、入口8aから入口8aの外側に延びる。分岐路14aは、複数の流路15aを入口8a側から原料ガスの上流側に向けてトーナメント状に合流させる。分割通路16bは、導入通路8が複数の流路15aに対応して分割された通路であり、複数の流路15aにそれぞれ連なって通じる。これにより、基板上に成長させるエピタキシャル層の膜厚の均一性を良好にすることが可能となる気相成長装置を提供する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)