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1. (WO2018042756) ATOMIC LAYER GROWTH APPARATUS AND ATOMIC LAYER GROWTH METHOD

Pub. No.:    WO/2018/042756    International Application No.:    PCT/JP2017/016189
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Tue Apr 25 01:59:59 CEST 2017
IPC: H01L 21/31
C23C 16/44
C23C 16/455
C23C 16/458
Applicants: THE JAPAN STEEL WORKS, LTD.
株式会社日本製鋼所
Inventors: WASHIO, Keisuke
鷲尾 圭亮
MATSUMOTO, Tatsuya
松本 竜弥
Title: ATOMIC LAYER GROWTH APPARATUS AND ATOMIC LAYER GROWTH METHOD
Abstract:
An atomic layer growth apparatus is provided with: a film formation container 11 in which a film formation process is performed; a stage 14 for holding a substrate 100 and capable of moving vertically; a susceptor 50 for holding the substrate 100, the susceptor 50 being held on the stage 14; and a stage stopper 17 for stopping the rising of the stage 14 and making contact with the susceptor 50 to thereby demarcate between a film formation space S in which the film formation process is performed and a conveying space in which the substrate 100 is conveyed. Furthermore, the susceptor 50 is provided with: an upper susceptor substrate holding part 52B for holding the substrate 100, and an upper susceptor peripheral edge part 52A that is disposed around the upper susceptor substrate holding part 52B, a susceptor anti-sticking material 15 being provided on the upper susceptor peripheral edge part 52A.