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|1. (WO2018042755) ATOMIC LAYER GROWTH DEVICE AND ATOMIC LAYER GROWTH METHOD|
|Applicants:||THE JAPAN STEEL WORKS, LTD.
|Title:||ATOMIC LAYER GROWTH DEVICE AND ATOMIC LAYER GROWTH METHOD|
An atomic layer growth device is provided with: a film formation container 11 in which a film formation treatment is performed; a stage 14 for retaining a substrate 100, the stage being provided in the film formation container 11 and being capable of moving up and down; a stage stopper 17 for stopping ascent of the stage 14 and for coming in contact with the stage 14 and thereby partitioning a film formation space S in which the film formation treatment is performed and a conveyance space in which conveyance of the substrate 100 is performed; a peripheral-edge stage adhesion preventive material 15 for covering a peripheral edge of the stage 14; and a stage stopper adhesion preventive material 24 provided on the stage stopper 17.