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1. (WO2018042755) ATOMIC LAYER GROWTH DEVICE AND ATOMIC LAYER GROWTH METHOD

Pub. No.:    WO/2018/042755    International Application No.:    PCT/JP2017/016188
Publication Date: Fri Mar 09 00:59:59 CET 2018 International Filing Date: Tue Apr 25 01:59:59 CEST 2017
IPC: C23C 16/44
H01L 21/31
H01L 21/316
H01L 51/50
H05B 33/04
H05B 33/10
Applicants: THE JAPAN STEEL WORKS, LTD.
株式会社日本製鋼所
Inventors: WASHIO, Keisuke
鷲尾 圭亮
MATSUMOTO, Tatsuya
松本 竜弥
Title: ATOMIC LAYER GROWTH DEVICE AND ATOMIC LAYER GROWTH METHOD
Abstract:
An atomic layer growth device is provided with: a film formation container 11 in which a film formation treatment is performed; a stage 14 for retaining a substrate 100, the stage being provided in the film formation container 11 and being capable of moving up and down; a stage stopper 17 for stopping ascent of the stage 14 and for coming in contact with the stage 14 and thereby partitioning a film formation space S in which the film formation treatment is performed and a conveyance space in which conveyance of the substrate 100 is performed; a peripheral-edge stage adhesion preventive material 15 for covering a peripheral edge of the stage 14; and a stage stopper adhesion preventive material 24 provided on the stage stopper 17.